Formation of TiO2 nano pattern on GaN-based light-emitting diodes for light extraction efficiency

Joong Yeon Cho, Kyeong Jae Byeon, Hyoungwon Park, Hyeong Seok Kim, Heon Lee

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A TiO2 nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO2 nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO2 nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO2 nano-structure. No electrical degradation was observed for the patterned LED device.

Original languageEnglish
Pages (from-to)1021031-1021034
Number of pages4
JournalJapanese journal of applied physics
Issue number10
Publication statusPublished - 2010 Oct

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Formation of TiO<sub>2</sub> nano pattern on GaN-based light-emitting diodes for light extraction efficiency'. Together they form a unique fingerprint.

Cite this