Formation of TiO2 nano pattern on GaN-based light-emitting diodes for light extraction efficiency

Joong Yeon Cho, Kyeong Jae Byeon, Hyoungwon Park, Hyeong Seok Kim, Heon Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A TiO2 nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO2 nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO2 nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO2 nano-structure. No electrical degradation was observed for the patterned LED device.

Original languageEnglish
Pages (from-to)1021031-1021034
Number of pages4
JournalJapanese Journal of Applied Physics
Volume49
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

Light emitting diodes
light emitting diodes
Sapphire
sapphire
degradation
Degradation
Plasma etching
plasma etching
Substrates
Tin oxides
indium oxides
Indium
tin oxides
Electric properties
electrical properties
Electrodes
electrodes
output

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Formation of TiO2 nano pattern on GaN-based light-emitting diodes for light extraction efficiency. / Cho, Joong Yeon; Byeon, Kyeong Jae; Park, Hyoungwon; Kim, Hyeong Seok; Lee, Heon.

In: Japanese Journal of Applied Physics, Vol. 49, No. 10, 01.10.2010, p. 1021031-1021034.

Research output: Contribution to journalArticle

Cho, Joong Yeon ; Byeon, Kyeong Jae ; Park, Hyoungwon ; Kim, Hyeong Seok ; Lee, Heon. / Formation of TiO2 nano pattern on GaN-based light-emitting diodes for light extraction efficiency. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 10. pp. 1021031-1021034.
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