Formation of vanadium-based ohmic contacts to n-GaN

June O. Song, Sang Ho Kim, Joon Seop Kwak, Tae Yeon Seong

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.

Original languageEnglish
Pages (from-to)1154-1156
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number6
DOIs
Publication statusPublished - 2003 Aug 11
Externally publishedYes

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vanadium
electric contacts
annealing
contact resistance
Auger spectroscopy
electron spectroscopy
x ray diffraction
temperature dependence
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of vanadium-based ohmic contacts to n-GaN. / Song, June O.; Kim, Sang Ho; Kwak, Joon Seop; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 83, No. 6, 11.08.2003, p. 1154-1156.

Research output: Contribution to journalArticle

Song, June O. ; Kim, Sang Ho ; Kwak, Joon Seop ; Seong, Tae Yeon. / Formation of vanadium-based ohmic contacts to n-GaN. In: Applied Physics Letters. 2003 ; Vol. 83, No. 6. pp. 1154-1156.
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