Formation of vanadium-based ohmic contacts to n-GaN

June O. Song, Sang Ho Kim, Joon Seop Kwak, Tae Yeon Seong

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.

Original languageEnglish
Pages (from-to)1154-1156
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number6
DOIs
Publication statusPublished - 2003 Aug 11

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Formation of vanadium-based ohmic contacts to n-GaN'. Together they form a unique fingerprint.

  • Cite this