A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)