Formation of vertically aligned cobalt Silicide Nanowire arrays through a solid-state reaction

Seulah Lee, Jaehong Yoon, Bonwoong Koo, Dong Hoon Shin, Ja Hoon Koo, Cheol Jin Lee, Young Woon Kim, Hyungjun Kim, Taeyoon Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report for the first time synthesis of high-density arrays of vertically well-aligned cobalt monosilicide (CoSi) nanowires (NWs) in a large area via a solid-state reaction. The vertical arrays of 1-μm-long Si NWs were first grown on a p-type (1 0 0) Si substrate by the aqueous electroless etching (AEE) method, and a 40-nm-thick Co layer was conformally deposited using a thermal atomic layer deposition system as revealed by SEM and transmission electron microscope analyses. The rapid thermal annealing process was carried out at various temperatures ranging from 700 to 1000 °C; the X-ray diffraction analysis confirmed that the polycrystalline CoSi NW arrays were formed at temperatures above 900 °C. The required high driving force for this silicide formation can be attributed to the significant amounts of oxygen-related contaminants at the defect sites of the highly rough surfaces of AEE-grown Si NWs. To demonstrate practical applications, field emitters and Schottky diodes were fabricated using the vertically aligned CoSi NW arrays. The field emission measurements showed a turn-on field of 10.9 V/μm and a field enhancement factor of 328, indicating the feasibility of vertically aligned CoSi NW arrays as promising field emitters. For the Schottky diodes, the measured Schottky barrier height was 0.52 eV and the estimated ideality factor obtained from the I-V characteristic curves was 2.28.

Original languageEnglish
Article number6542738
Pages (from-to)704-711
Number of pages8
JournalIEEE Transactions on Nanotechnology
Volume12
Issue number5
DOIs
Publication statusPublished - 2013 Sep 17

Fingerprint

Solid state reactions
Nanowires
Cobalt
Etching
Diodes
Atomic layer deposition
Rapid thermal annealing
Field emission
X ray diffraction analysis
Electron microscopes
Impurities
Temperature
Defects
Scanning electron microscopy
Oxygen
Substrates

Keywords

  • Atomic layer deposition (ALD)
  • cobalt silicide nanowire
  • field emission
  • rapid thermal annealing (RTA)
  • Schottky diode
  • solid-state reaction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Formation of vertically aligned cobalt Silicide Nanowire arrays through a solid-state reaction. / Lee, Seulah; Yoon, Jaehong; Koo, Bonwoong; Shin, Dong Hoon; Koo, Ja Hoon; Lee, Cheol Jin; Kim, Young Woon; Kim, Hyungjun; Lee, Taeyoon.

In: IEEE Transactions on Nanotechnology, Vol. 12, No. 5, 6542738, 17.09.2013, p. 704-711.

Research output: Contribution to journalArticle

Lee, Seulah ; Yoon, Jaehong ; Koo, Bonwoong ; Shin, Dong Hoon ; Koo, Ja Hoon ; Lee, Cheol Jin ; Kim, Young Woon ; Kim, Hyungjun ; Lee, Taeyoon. / Formation of vertically aligned cobalt Silicide Nanowire arrays through a solid-state reaction. In: IEEE Transactions on Nanotechnology. 2013 ; Vol. 12, No. 5. pp. 704-711.
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AB - We report for the first time synthesis of high-density arrays of vertically well-aligned cobalt monosilicide (CoSi) nanowires (NWs) in a large area via a solid-state reaction. The vertical arrays of 1-μm-long Si NWs were first grown on a p-type (1 0 0) Si substrate by the aqueous electroless etching (AEE) method, and a 40-nm-thick Co layer was conformally deposited using a thermal atomic layer deposition system as revealed by SEM and transmission electron microscope analyses. The rapid thermal annealing process was carried out at various temperatures ranging from 700 to 1000 °C; the X-ray diffraction analysis confirmed that the polycrystalline CoSi NW arrays were formed at temperatures above 900 °C. The required high driving force for this silicide formation can be attributed to the significant amounts of oxygen-related contaminants at the defect sites of the highly rough surfaces of AEE-grown Si NWs. To demonstrate practical applications, field emitters and Schottky diodes were fabricated using the vertically aligned CoSi NW arrays. The field emission measurements showed a turn-on field of 10.9 V/μm and a field enhancement factor of 328, indicating the feasibility of vertically aligned CoSi NW arrays as promising field emitters. For the Schottky diodes, the measured Schottky barrier height was 0.52 eV and the estimated ideality factor obtained from the I-V characteristic curves was 2.28.

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