Abstract
Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.
Original language | English |
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Pages (from-to) | 546-550 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 221 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2000 Dec |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry