Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy

I. Suemune, N. Morooka, K. Uesugi, Y. W. Ok, Tae Yeon Seong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.

Original languageEnglish
Pages (from-to)546-550
Number of pages5
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
Publication statusPublished - 2000 Dec 1
Externally publishedYes

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Molecular beam epitaxy
molecular beam epitaxy
Modulation
wire
Wire
modulation
Chemical analysis
Microscopic examination
examination
intervals
Crystals
Electrons
crystals
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy. / Suemune, I.; Morooka, N.; Uesugi, K.; Ok, Y. W.; Seong, Tae Yeon.

In: Journal of Crystal Growth, Vol. 221, No. 1-4, 01.12.2000, p. 546-550.

Research output: Contribution to journalArticle

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