Abstract
Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 546-550 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 221 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2000 Dec 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy. / Suemune, I.; Morooka, N.; Uesugi, K.; Ok, Y. W.; Seong, Tae Yeon.
In: Journal of Crystal Growth, Vol. 221, No. 1-4, 01.12.2000, p. 546-550.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy
AU - Suemune, I.
AU - Morooka, N.
AU - Uesugi, K.
AU - Ok, Y. W.
AU - Seong, Tae Yeon
PY - 2000/12/1
Y1 - 2000/12/1
N2 - Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.
AB - Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.
UR - http://www.scopus.com/inward/record.url?scp=0034504522&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034504522&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(00)00775-2
DO - 10.1016/S0022-0248(00)00775-2
M3 - Article
AN - SCOPUS:0034504522
VL - 221
SP - 546
EP - 550
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -