TY - JOUR
T1 - Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy
AU - Suemune, I.
AU - Morooka, N.
AU - Uesugi, K.
AU - Ok, Y. W.
AU - Seong, T. Y.
PY - 2000/12
Y1 - 2000/12
N2 - Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.
AB - Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.
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U2 - 10.1016/S0022-0248(00)00775-2
DO - 10.1016/S0022-0248(00)00775-2
M3 - Article
AN - SCOPUS:0034504522
VL - 221
SP - 546
EP - 550
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -