Abstract
Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 546-550 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 221 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2000 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
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Suemune, I., Morooka, N., Uesugi, K., Ok, Y. W., & Seong, T. Y. (2000). Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy. Journal of Crystal Growth, 221(1-4), 546-550. https://doi.org/10.1016/S0022-0248(00)00775-2