Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy

I. Suemune; N. Morooka; K. Uesugi; Y. W. Ok; T. Y. Seong

doi:10.1016/S0022-0248(00)00775-2

Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy

I. Suemune, N. Morooka, K. Uesugi, Y. W. Ok, T. Y. Seong

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.

Original language	English
Pages (from-to)	546-550
Number of pages	5
Journal	Journal of Crystal Growth
Volume	221
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(00)00775-2
Publication status	Published - 2000 Dec
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(00)00775-2

Cite this

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title = "Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy",

abstract = "Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.",

author = "I. Suemune and N. Morooka and K. Uesugi and Ok, {Y. W.} and Seong, {T. Y.}",

note = "Funding Information: The authors wish to thank Tri-chemical Laboratory for the supply of the MO precursors. They are grateful to Mitsuo Hoshiyama for his technical assistance for our MOMBE system. This work was supported in part by the Telecommunications Advancement Organization of Japan. One author (TYS) wishes to thank the Korea Ministry of Education (the Brain Korea 21 project) for partial support of his work.",

year = "2000",

month = dec,

doi = "10.1016/S0022-0248(00)00775-2",

language = "English",

volume = "221",

pages = "546--550",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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number = "1-4",

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TY - JOUR

T1 - Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy

AU - Suemune, I.

AU - Morooka, N.

AU - Uesugi, K.

AU - Ok, Y. W.

AU - Seong, T. Y.

N1 - Funding Information: The authors wish to thank Tri-chemical Laboratory for the supply of the MO precursors. They are grateful to Mitsuo Hoshiyama for his technical assistance for our MOMBE system. This work was supported in part by the Telecommunications Advancement Organization of Japan. One author (TYS) wishes to thank the Korea Ministry of Education (the Brain Korea 21 project) for partial support of his work.

PY - 2000/12

Y1 - 2000/12

N2 - Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.

AB - Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.

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U2 - 10.1016/S0022-0248(00)00775-2

DO - 10.1016/S0022-0248(00)00775-2

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VL - 221

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -

Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy

Abstract

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