TY - JOUR
T1 - Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy
AU - Suemune, I.
AU - Morooka, N.
AU - Uesugi, K.
AU - Ok, Y. W.
AU - Seong, T. Y.
N1 - Funding Information:
The authors wish to thank Tri-chemical Laboratory for the supply of the MO precursors. They are grateful to Mitsuo Hoshiyama for his technical assistance for our MOMBE system. This work was supported in part by the Telecommunications Advancement Organization of Japan. One author (TYS) wishes to thank the Korea Ministry of Education (the Brain Korea 21 project) for partial support of his work.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2000/12
Y1 - 2000/12
N2 - Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.
AB - Wire-like structures are found to form on the GaAsN surfaces. The wire heights and intervals are dependent on the N composition and are typically approximately 10 and approximately 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of `n' is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic examination shows that the lateral compositional modulation is correlated with the surface-wire-like structure. The formation mechanism is discussed based on the site-selective N incorporation at the A-steps on the wired surfaces.
UR - http://www.scopus.com/inward/record.url?scp=0034504522&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034504522&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(00)00775-2
DO - 10.1016/S0022-0248(00)00775-2
M3 - Article
AN - SCOPUS:0034504522
VL - 221
SP - 546
EP - 550
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -