Forming-free resistive switching characteristics and improved reliability in sub-stoichiometric NbNx films

Hee Dong Kim, Min Ju Yun, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

In this study, we demonstrate forming-free and reliable resistive switching (RS) characteristics by controlling the stoichiometry of niobium nitride (NbNx) films. Compared to a perfect stoichiometric NbNx film, a decrease of 6% nitrogen content and an increase of 5% O2 content are found in the sub-stoichiometric NbNx sample (s-NbNx), and a structural change for the s-NbNx film is observed from X-ray diffraction results, which results in the possibility of abundant defect generation in the s-NbNx film at virgin state. In the RS test, the s-NbNx film normally carries out well without initial forming because of the already-formed conducting filaments; in particular, in the reliability study, the s-NbNx film shows more stable dc cycling characteristics for 1000 cycles without any degradation and smaller variations in the operating current and voltage characteristics.

Original languageEnglish
Pages (from-to)264-268
Number of pages5
JournalPhysica Status Solidi - Rapid Research Letters
Volume9
Issue number4
DOIs
Publication statusPublished - 2015 Apr 1

Keywords

  • Niobium nitrides
  • Resistive random access memories
  • Resistive switching
  • Stoichiometry
  • Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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