Forming-free SiN-based resistive switching memory prepared by RF sputtering

Hee Dong Kim, Ho Myoung An, Seok Man Hong, Tae Geun Kim

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A forming-free SiN-based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10-nm thick SiN film, the memory device showed forming-free switching behavior under ±2 V/100 ns. The conduction mechanisms at low- and high-resistance states were verified by Ohmic behavior and modified space-charge-limited conduction, respectively. In a reliability test, the device exhibits good endurance over 109 cycles and long data retention over 105 s at 85 °C. These results demonstrate that SiN-based RSM devices can be readily available without forming processes using an RF sputtering method.

Original languageEnglish
Pages (from-to)1822-1827
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume210
Issue number9
DOIs
Publication statusPublished - 2013 Sep 1

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Sputtering
sputtering
Data storage equipment
Electric space charge
Thick films
conduction
endurance
low resistance
high resistance
Durability
thick films
space charge
cycles

Keywords

  • memory
  • PECVD
  • resistive switching
  • SiN
  • sputtering

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Forming-free SiN-based resistive switching memory prepared by RF sputtering. / Kim, Hee Dong; An, Ho Myoung; Hong, Seok Man; Kim, Tae Geun.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 9, 01.09.2013, p. 1822-1827.

Research output: Contribution to journalArticle

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