Foundation of rf CMOS and SiGe BiCMOS technologies

James S. Dunn; David C. Ahlgren; Douglas D. Coolbaugh; Natalie B. Feilchenfeld; Greg Freeman; David R. Greenberg; Robert A. Groves; Fernando J. Guarín; Y. Hammad; Alvin J. Joseph; Louis D. Lanzerotti; Stephen A. St.Onge; Bradley A. Orner; Jae Sung Rieh; Kenneth J. Stein; Steven H. Voldman; Ping Chuan Wang; Michael J. Zierak; Seshadri Subbanna; David L. Harame; Dean A. Herman; Bernard S. Meyerson

doi:10.1147/rd.472.0101

Foundation of rf CMOS and SiGe BiCMOS technologies

James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Y. Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St.Onge, Bradley A. Orner, Jae Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. HarameDean A. Herman, Bernard S. Meyerson

Research output: Contribution to journal › Review article › peer-review

85 Citations (Scopus)

Abstract

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

Original language	English
Pages (from-to)	101-138
Number of pages	38
Journal	IBM Journal of Research and Development
Volume	47
Issue number	2-3
DOIs	https://doi.org/10.1147/rd.472.0101
Publication status	Published - 2003
Externally published	Yes

ASJC Scopus subject areas

Computer Science(all)

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Dunn, J. S., Ahlgren, D. C., Coolbaugh, D. D., Feilchenfeld, N. B., Freeman, G., Greenberg, D. R., Groves, R. A., Guarín, F. J., Hammad, Y., Joseph, A. J., Lanzerotti, L. D., St.Onge, S. A., Orner, B. A., Rieh, J. S., Stein, K. J., Voldman, S. H., Wang, P. C., Zierak, M. J., Subbanna, S., ... Meyerson, B. S. (2003). Foundation of rf CMOS and SiGe BiCMOS technologies. IBM Journal of Research and Development, 47(2-3), 101-138. https://doi.org/10.1147/rd.472.0101

Dunn, JS, Ahlgren, DC, Coolbaugh, DD, Feilchenfeld, NB, Freeman, G, Greenberg, DR, Groves, RA, Guarín, FJ, Hammad, Y, Joseph, AJ, Lanzerotti, LD, St.Onge, SA, Orner, BA, Rieh, JS, Stein, KJ, Voldman, SH, Wang, PC, Zierak, MJ, Subbanna, S, Harame, DL, Herman, DA & Meyerson, BS 2003, 'Foundation of rf CMOS and SiGe BiCMOS technologies', IBM Journal of Research and Development, vol. 47, no. 2-3, pp. 101-138. https://doi.org/10.1147/rd.472.0101

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title = "Foundation of rf CMOS and SiGe BiCMOS technologies",

abstract = "This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.",

author = "Dunn, {James S.} and Ahlgren, {David C.} and Coolbaugh, {Douglas D.} and Feilchenfeld, {Natalie B.} and Greg Freeman and Greenberg, {David R.} and Groves, {Robert A.} and Guar{\'i}n, {Fernando J.} and Y. Hammad and Joseph, {Alvin J.} and Lanzerotti, {Louis D.} and St.Onge, {Stephen A.} and Orner, {Bradley A.} and Rieh, {Jae Sung} and Stein, {Kenneth J.} and Voldman, {Steven H.} and Wang, {Ping Chuan} and Zierak, {Michael J.} and Seshadri Subbanna and Harame, {David L.} and Herman, {Dean A.} and Meyerson, {Bernard S.}",

year = "2003",

doi = "10.1147/rd.472.0101",

language = "English",

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AU - Freeman, Greg

AU - Greenberg, David R.

AU - Groves, Robert A.

AU - Guarín, Fernando J.

AU - Hammad, Y.

AU - Joseph, Alvin J.

AU - Lanzerotti, Louis D.

AU - St.Onge, Stephen A.

AU - Orner, Bradley A.

AU - Rieh, Jae Sung

AU - Stein, Kenneth J.

AU - Voldman, Steven H.

AU - Wang, Ping Chuan

AU - Zierak, Michael J.

AU - Subbanna, Seshadri

AU - Harame, David L.

AU - Herman, Dean A.

AU - Meyerson, Bernard S.

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AB - This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

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Foundation of rf CMOS and SiGe BiCMOS technologies

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