Foundation of rf CMOS and SiGe BiCMOS technologies

James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Y. Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St.Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame & 2 others Dean A. Herman, Bernard S. Meyerson

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

Original languageEnglish
Pages (from-to)101-138
Number of pages38
JournalIBM Journal of Research and Development
Volume47
Issue number2-3
Publication statusPublished - 2003 Mar 1
Externally publishedYes

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BiCMOS technology
Signal systems
Heterojunction bipolar transistors

ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Dunn, J. S., Ahlgren, D. C., Coolbaugh, D. D., Feilchenfeld, N. B., Freeman, G., Greenberg, D. R., ... Meyerson, B. S. (2003). Foundation of rf CMOS and SiGe BiCMOS technologies. IBM Journal of Research and Development, 47(2-3), 101-138.

Foundation of rf CMOS and SiGe BiCMOS technologies. / Dunn, James S.; Ahlgren, David C.; Coolbaugh, Douglas D.; Feilchenfeld, Natalie B.; Freeman, Greg; Greenberg, David R.; Groves, Robert A.; Guarín, Fernando J.; Hammad, Y.; Joseph, Alvin J.; Lanzerotti, Louis D.; St.Onge, Stephen A.; Orner, Bradley A.; Rieh, Jae-Sung; Stein, Kenneth J.; Voldman, Steven H.; Wang, Ping Chuan; Zierak, Michael J.; Subbanna, Seshadri; Harame, David L.; Herman, Dean A.; Meyerson, Bernard S.

In: IBM Journal of Research and Development, Vol. 47, No. 2-3, 01.03.2003, p. 101-138.

Research output: Contribution to journalArticle

Dunn, JS, Ahlgren, DC, Coolbaugh, DD, Feilchenfeld, NB, Freeman, G, Greenberg, DR, Groves, RA, Guarín, FJ, Hammad, Y, Joseph, AJ, Lanzerotti, LD, St.Onge, SA, Orner, BA, Rieh, J-S, Stein, KJ, Voldman, SH, Wang, PC, Zierak, MJ, Subbanna, S, Harame, DL, Herman, DA & Meyerson, BS 2003, 'Foundation of rf CMOS and SiGe BiCMOS technologies', IBM Journal of Research and Development, vol. 47, no. 2-3, pp. 101-138.
Dunn JS, Ahlgren DC, Coolbaugh DD, Feilchenfeld NB, Freeman G, Greenberg DR et al. Foundation of rf CMOS and SiGe BiCMOS technologies. IBM Journal of Research and Development. 2003 Mar 1;47(2-3):101-138.
Dunn, James S. ; Ahlgren, David C. ; Coolbaugh, Douglas D. ; Feilchenfeld, Natalie B. ; Freeman, Greg ; Greenberg, David R. ; Groves, Robert A. ; Guarín, Fernando J. ; Hammad, Y. ; Joseph, Alvin J. ; Lanzerotti, Louis D. ; St.Onge, Stephen A. ; Orner, Bradley A. ; Rieh, Jae-Sung ; Stein, Kenneth J. ; Voldman, Steven H. ; Wang, Ping Chuan ; Zierak, Michael J. ; Subbanna, Seshadri ; Harame, David L. ; Herman, Dean A. ; Meyerson, Bernard S. / Foundation of rf CMOS and SiGe BiCMOS technologies. In: IBM Journal of Research and Development. 2003 ; Vol. 47, No. 2-3. pp. 101-138.
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