Foundation of rf CMOS and SiGe BiCMOS technologies

James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Y. Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St.Onge, Bradley A. Orner, Jae Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. HarameDean A. Herman, Bernard S. Meyerson

Research output: Contribution to journalReview article

79 Citations (Scopus)

Abstract

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

Original languageEnglish
Pages (from-to)101-138
Number of pages38
JournalIBM Journal of Research and Development
Volume47
Issue number2-3
DOIs
Publication statusPublished - 2003

ASJC Scopus subject areas

  • Computer Science(all)

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  • Cite this

    Dunn, J. S., Ahlgren, D. C., Coolbaugh, D. D., Feilchenfeld, N. B., Freeman, G., Greenberg, D. R., Groves, R. A., Guarín, F. J., Hammad, Y., Joseph, A. J., Lanzerotti, L. D., St.Onge, S. A., Orner, B. A., Rieh, J. S., Stein, K. J., Voldman, S. H., Wang, P. C., Zierak, M. J., Subbanna, S., ... Meyerson, B. S. (2003). Foundation of rf CMOS and SiGe BiCMOS technologies. IBM Journal of Research and Development, 47(2-3), 101-138. https://doi.org/10.1147/rd.472.0101