Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Taehee Yoo, S. Khym, Sun Young Yea, Sunjae Chung, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation.

Original languageEnglish
Article number202505
JournalApplied Physics Letters
Volume95
Issue number20
DOIs
Publication statusPublished - 2009 Nov 30

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Hall resistance
Hall effect
magnetization
room temperature
pulses

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices. / Yoo, Taehee; Khym, S.; Yea, Sun Young; Chung, Sunjae; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Applied Physics Letters, Vol. 95, No. 20, 202505, 30.11.2009.

Research output: Contribution to journalArticle

Yoo, Taehee ; Khym, S. ; Yea, Sun Young ; Chung, Sunjae ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices. In: Applied Physics Letters. 2009 ; Vol. 95, No. 20.
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