Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film

Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaMnAs ferromagnetic semiconductor films under compressive strain are characterized by strong biaxial in-plane anisotropy, which generates four stable magnetization directions at zero magnetic field. This feature results in double switching behavior during magnetization reversal process measured by planar Hall resistance (PHR). Minor scans of the PHR exhibit staggered asymmetric loops due to the formation of stable muti-domain structures. We show that the resulting four stable PHR states can serve as quaternary logic states for a spin memory device.

Original languageEnglish
Title of host publicationNovel Materials and Devices for Spintronics
Pages37-42
Number of pages6
Publication statusPublished - 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2009 Apr 142009 Apr 17

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1183
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period09/4/1409/4/17

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Lee, S., Liu, X., & Furdyna, J. K. (2009). Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film. In Novel Materials and Devices for Spintronics (pp. 37-42). (Materials Research Society Symposium Proceedings; Vol. 1183).