Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film

Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaMnAs ferromagnetic semiconductor films under compressive strain are characterized by strong biaxial in-plane anisotropy, which generates four stable magnetization directions at zero magnetic field. This feature results in double switching behavior during magnetization reversal process measured by planar Hall resistance (PHR). Minor scans of the PHR exhibit staggered asymmetric loops due to the formation of stable muti-domain structures. We show that the resulting four stable PHR states can serve as quaternary logic states for a spin memory device.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages37-42
Number of pages6
Volume1183
Publication statusPublished - 2009 Dec 1
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2009 Apr 142009 Apr 17

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period09/4/1409/4/17

Fingerprint

Magnetization reversal
Hall resistance
ferromagnetic films
Magnetization
Anisotropy
Semiconductor materials
Magnetic fields
Data storage equipment
magnetization
logic
anisotropy
magnetic fields
Direction compound

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Lee, S. H., Liu, X., & Furdyna, J. K. (2009). Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film. In Materials Research Society Symposium Proceedings (Vol. 1183, pp. 37-42)

Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film. / Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

Materials Research Society Symposium Proceedings. Vol. 1183 2009. p. 37-42.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, SH, Liu, X & Furdyna, JK 2009, Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film. in Materials Research Society Symposium Proceedings. vol. 1183, pp. 37-42, 2009 MRS Spring Meeting, San Francisco, CA, United States, 09/4/14.
Lee SH, Liu X, Furdyna JK. Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film. In Materials Research Society Symposium Proceedings. Vol. 1183. 2009. p. 37-42
Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film. Materials Research Society Symposium Proceedings. Vol. 1183 2009. pp. 37-42
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