Four states memory function in GaMnAs ferromagenic semiconductor epilayer

Sanghoon Lee, D. Y. Shin, X. Liu, J. K. Furdyna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages234-235
Number of pages2
DOIs
Publication statusPublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Keywords

  • Anisotropy
  • Component
  • Ferromagnetic semiconductor
  • GaMnAs
  • Quaternary states

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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    Lee, S., Shin, D. Y., Liu, X., & Furdyna, J. K. (2006). Four states memory function in GaMnAs ferromagenic semiconductor epilayer. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 234-235). [4388851] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388851