Four states memory function in GaMnAs ferromagenic semiconductor epilayer

Sang Hoon Lee, D. Y. Shin, X. Liu, J. K. Furdyna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages234-235
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Epilayers
Semiconductor materials
Magnetic fields
Data storage equipment
Magnetization
Anisotropy

Keywords

  • Anisotropy
  • Component
  • Ferromagnetic semiconductor
  • GaMnAs
  • Quaternary states

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Lee, S. H., Shin, D. Y., Liu, X., & Furdyna, J. K. (2006). Four states memory function in GaMnAs ferromagenic semiconductor epilayer. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 234-235). [4388851] https://doi.org/10.1109/NMDC.2006.4388851

Four states memory function in GaMnAs ferromagenic semiconductor epilayer. / Lee, Sang Hoon; Shin, D. Y.; Liu, X.; Furdyna, J. K.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 234-235 4388851.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, SH, Shin, DY, Liu, X & Furdyna, JK 2006, Four states memory function in GaMnAs ferromagenic semiconductor epilayer. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388851, pp. 234-235, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388851
Lee SH, Shin DY, Liu X, Furdyna JK. Four states memory function in GaMnAs ferromagenic semiconductor epilayer. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 234-235. 4388851 https://doi.org/10.1109/NMDC.2006.4388851
Lee, Sang Hoon ; Shin, D. Y. ; Liu, X. ; Furdyna, J. K. / Four states memory function in GaMnAs ferromagenic semiconductor epilayer. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 234-235
@inproceedings{6ef80705b37643bf8ddda7bfa32d23a2,
title = "Four states memory function in GaMnAs ferromagenic semiconductor epilayer",
abstract = "GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.",
keywords = "Anisotropy, Component, Ferromagnetic semiconductor, GaMnAs, Quaternary states",
author = "Lee, {Sang Hoon} and Shin, {D. Y.} and X. Liu and Furdyna, {J. K.}",
year = "2006",
month = "12",
day = "1",
doi = "10.1109/NMDC.2006.4388851",
language = "English",
isbn = "1424405408",
volume = "1",
pages = "234--235",
booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

}

TY - GEN

T1 - Four states memory function in GaMnAs ferromagenic semiconductor epilayer

AU - Lee, Sang Hoon

AU - Shin, D. Y.

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.

AB - GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.

KW - Anisotropy

KW - Component

KW - Ferromagnetic semiconductor

KW - GaMnAs

KW - Quaternary states

UR - http://www.scopus.com/inward/record.url?scp=50249108945&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249108945&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2006.4388851

DO - 10.1109/NMDC.2006.4388851

M3 - Conference contribution

AN - SCOPUS:50249108945

SN - 1424405408

SN - 9781424405404

VL - 1

SP - 234

EP - 235

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

ER -