Fractional quantum Hall effect in hole Landau levels

Sung Ryul Yang, A. H. MacDonald, D. Yoshioka

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The fractional quantum hole effect for a hole gas in GaAs/AlxGa1-xAs heterostructures with strong heavy- and light-hole mixing is studied by combining a theory of the effective hole-hole interaction with finite-size exact diagonalization studies. We have investigated the dependence of the excitation gap at (1/3 filling on the amount of heavy- and light-hole mixing. The mixing can be controlled by applying uniaxial stress. Our results suggest a novel experiment to observe a transition between incompressible and gapless states.

Original languageEnglish
Pages (from-to)1290-1293
Number of pages4
JournalPhysical Review B
Volume41
Issue number2
DOIs
Publication statusPublished - 1990 Dec 1
Externally publishedYes

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Quantum Hall effect
quantum Hall effect
Heterojunctions
Gases
Experiments
gases
excitation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Fractional quantum Hall effect in hole Landau levels. / Yang, Sung Ryul; MacDonald, A. H.; Yoshioka, D.

In: Physical Review B, Vol. 41, No. 2, 01.12.1990, p. 1290-1293.

Research output: Contribution to journalArticle

Yang, Sung Ryul ; MacDonald, A. H. ; Yoshioka, D. / Fractional quantum Hall effect in hole Landau levels. In: Physical Review B. 1990 ; Vol. 41, No. 2. pp. 1290-1293.
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