Fractional quantum Hall effect in hole Landau levels

S. R.Eric Yang, A. H. MacDonald, D. Yoshioka

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The fractional quantum hole effect for a hole gas in GaAs/AlxGa1-xAs heterostructures with strong heavy- and light-hole mixing is studied by combining a theory of the effective hole-hole interaction with finite-size exact diagonalization studies. We have investigated the dependence of the excitation gap at (1/3 filling on the amount of heavy- and light-hole mixing. The mixing can be controlled by applying uniaxial stress. Our results suggest a novel experiment to observe a transition between incompressible and gapless states.

Original languageEnglish
Pages (from-to)1290-1293
Number of pages4
JournalPhysical Review B
Volume41
Issue number2
DOIs
Publication statusPublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Fractional quantum Hall effect in hole Landau levels'. Together they form a unique fingerprint.

  • Cite this