TY - JOUR
T1 - Free standing metal-oxide semiconductor as dye-sensitized solar cells electrolyte spacer and its electrochemical analysis
AU - Lim, Jeongmin
AU - Jo, Yimhyun
AU - Pak, Hunkyun
AU - Kang, Man Gu
AU - Jun, Yongseok
PY - 2011
Y1 - 2011
N2 - Dye-sensitized solar cells have received much attention due to a high solar energy conversion yield and a cost-effective alternative to conventional solar cells. However, liquid electrolyte with high volatility causes leakage and vaporization of a liquid solvent. Therefore, the long-term stability of cells is very limited. In this study, we used high-porous metal oxide semiconductor as electrolytes spacer/holder. The pores of the spacer are filled with a liquid electrolytes and acts such as electrolytes holding layer by its sponge-like structure. Besides, it works as scattering layer simultaneously. We used IV-measurement, electrochemical impedance spectroscopy(EIS), and IPCE to characterize the electron-current change and charge transfer resistance depending on various thickness of spacers.
AB - Dye-sensitized solar cells have received much attention due to a high solar energy conversion yield and a cost-effective alternative to conventional solar cells. However, liquid electrolyte with high volatility causes leakage and vaporization of a liquid solvent. Therefore, the long-term stability of cells is very limited. In this study, we used high-porous metal oxide semiconductor as electrolytes spacer/holder. The pores of the spacer are filled with a liquid electrolytes and acts such as electrolytes holding layer by its sponge-like structure. Besides, it works as scattering layer simultaneously. We used IV-measurement, electrochemical impedance spectroscopy(EIS), and IPCE to characterize the electron-current change and charge transfer resistance depending on various thickness of spacers.
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M3 - Conference article
AN - SCOPUS:84861084036
JO - ACS National Meeting Book of Abstracts
JF - ACS National Meeting Book of Abstracts
SN - 0065-7727
T2 - 242nd ACS National Meeting and Exposition
Y2 - 28 August 2011 through 1 September 2011
ER -