Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride

Nae Man Park, Tae Soo Kim, Chel Jong Choi, Tae Yeon Seong, Seong Ju Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10 -3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsP Fauchet, J buriak, L Canham, N Koshida, B White JR
Volume638
Publication statusPublished - 2001
Externally publishedYes
EventMicrocrystalline and Nanocrystalline Semiconductors 2000 - Boston, MA, United States
Duration: 2000 Nov 272000 Nov 30

Other

OtherMicrocrystalline and Nanocrystalline Semiconductors 2000
CountryUnited States
CityBoston, MA
Period00/11/2700/11/30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Park, N. M., Kim, T. S., Choi, C. J., Seong, T. Y., & Park, S. J. (2001). Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride. In P. Fauchet, J. buriak, L. Canham, N. Koshida, & B. White JR (Eds.), Materials Research Society Symposium - Proceedings (Vol. 638)