Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride

Nae Man Park, Tae Soo Kim, Chel Jong Choi, Tae Yeon Seong, Seong Ju Park

Research output: Contribution to journalConference articlepeer-review

Abstract

Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10-3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Original languageEnglish
Pages (from-to)F1361-F1366
JournalMaterials Research Society Symposium - Proceedings
Volume638
Publication statusPublished - 2001
Externally publishedYes
EventMicrocrystalline and Nanocrystalline Semiconductors 2000 - Boston, MA, United States
Duration: 2000 Nov 272000 Nov 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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