Full integration and cell characteristics for 64Mb nonvolatile PRAM

S. H. Lee, Y. N. Hwang, S. Y. Lee, K. C. Ryoo, S. J. Ahn, Hyun Cheol Koo, C. W. Jeong, Y. T. Kim, G. H. Koh, G. T. Jeong, H. S. Jeong, Kinam Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Citations (Scopus)

Abstract

We have integrated a 64Mb nonvolatile random access memory using phase transition phenomena. Based on 0.18um-CMOS technologies, the vertical contact typed memory cell is fabricated. The device density can be sharply increased with decreasing the writing current and the GST size. But, for reduction of writing current, issues including set and interface resistances should be stabilized. Additionally, our results also show the feasibility of 256Mb nonvolatile PRAM with writing time below 100ns.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
Pages20-21
Number of pages2
Publication statusPublished - 2004
Externally publishedYes
Event2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
Duration: 2004 Jun 152004 Jun 17

Other

Other2004 Symposium on VLSI Technology - Digest of Technical Papers
CountryUnited States
CityHonolulu, HI
Period04/6/1504/6/17

Fingerprint

Data storage equipment
Phase transitions

Keywords

  • Cell characteristics
  • High density
  • PRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lee, S. H., Hwang, Y. N., Lee, S. Y., Ryoo, K. C., Ahn, S. J., Koo, H. C., ... Kim, K. (2004). Full integration and cell characteristics for 64Mb nonvolatile PRAM. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 20-21)

Full integration and cell characteristics for 64Mb nonvolatile PRAM. / Lee, S. H.; Hwang, Y. N.; Lee, S. Y.; Ryoo, K. C.; Ahn, S. J.; Koo, Hyun Cheol; Jeong, C. W.; Kim, Y. T.; Koh, G. H.; Jeong, G. T.; Jeong, H. S.; Kim, Kinam.

Digest of Technical Papers - Symposium on VLSI Technology. 2004. p. 20-21.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, SH, Hwang, YN, Lee, SY, Ryoo, KC, Ahn, SJ, Koo, HC, Jeong, CW, Kim, YT, Koh, GH, Jeong, GT, Jeong, HS & Kim, K 2004, Full integration and cell characteristics for 64Mb nonvolatile PRAM. in Digest of Technical Papers - Symposium on VLSI Technology. pp. 20-21, 2004 Symposium on VLSI Technology - Digest of Technical Papers, Honolulu, HI, United States, 04/6/15.
Lee SH, Hwang YN, Lee SY, Ryoo KC, Ahn SJ, Koo HC et al. Full integration and cell characteristics for 64Mb nonvolatile PRAM. In Digest of Technical Papers - Symposium on VLSI Technology. 2004. p. 20-21
Lee, S. H. ; Hwang, Y. N. ; Lee, S. Y. ; Ryoo, K. C. ; Ahn, S. J. ; Koo, Hyun Cheol ; Jeong, C. W. ; Kim, Y. T. ; Koh, G. H. ; Jeong, G. T. ; Jeong, H. S. ; Kim, Kinam. / Full integration and cell characteristics for 64Mb nonvolatile PRAM. Digest of Technical Papers - Symposium on VLSI Technology. 2004. pp. 20-21
@inproceedings{3e6c35b4210f4db78077c8d118ab74e4,
title = "Full integration and cell characteristics for 64Mb nonvolatile PRAM",
abstract = "We have integrated a 64Mb nonvolatile random access memory using phase transition phenomena. Based on 0.18um-CMOS technologies, the vertical contact typed memory cell is fabricated. The device density can be sharply increased with decreasing the writing current and the GST size. But, for reduction of writing current, issues including set and interface resistances should be stabilized. Additionally, our results also show the feasibility of 256Mb nonvolatile PRAM with writing time below 100ns.",
keywords = "Cell characteristics, High density, PRAM",
author = "Lee, {S. H.} and Hwang, {Y. N.} and Lee, {S. Y.} and Ryoo, {K. C.} and Ahn, {S. J.} and Koo, {Hyun Cheol} and Jeong, {C. W.} and Kim, {Y. T.} and Koh, {G. H.} and Jeong, {G. T.} and Jeong, {H. S.} and Kinam Kim",
year = "2004",
language = "English",
pages = "20--21",
booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",

}

TY - GEN

T1 - Full integration and cell characteristics for 64Mb nonvolatile PRAM

AU - Lee, S. H.

AU - Hwang, Y. N.

AU - Lee, S. Y.

AU - Ryoo, K. C.

AU - Ahn, S. J.

AU - Koo, Hyun Cheol

AU - Jeong, C. W.

AU - Kim, Y. T.

AU - Koh, G. H.

AU - Jeong, G. T.

AU - Jeong, H. S.

AU - Kim, Kinam

PY - 2004

Y1 - 2004

N2 - We have integrated a 64Mb nonvolatile random access memory using phase transition phenomena. Based on 0.18um-CMOS technologies, the vertical contact typed memory cell is fabricated. The device density can be sharply increased with decreasing the writing current and the GST size. But, for reduction of writing current, issues including set and interface resistances should be stabilized. Additionally, our results also show the feasibility of 256Mb nonvolatile PRAM with writing time below 100ns.

AB - We have integrated a 64Mb nonvolatile random access memory using phase transition phenomena. Based on 0.18um-CMOS technologies, the vertical contact typed memory cell is fabricated. The device density can be sharply increased with decreasing the writing current and the GST size. But, for reduction of writing current, issues including set and interface resistances should be stabilized. Additionally, our results also show the feasibility of 256Mb nonvolatile PRAM with writing time below 100ns.

KW - Cell characteristics

KW - High density

KW - PRAM

UR - http://www.scopus.com/inward/record.url?scp=4544367628&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4544367628&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:4544367628

SP - 20

EP - 21

BT - Digest of Technical Papers - Symposium on VLSI Technology

ER -