Full range optical and electrical properties of Zn-doped SnO2and oxide/metal/oxide multilayer thin films deposited on flexible PET substrate

Yoonho Cho; Narendra S. Parmar; Sahn Nahm; Ji Won Choi

doi:10.1016/j.jallcom.2016.09.293

Full range optical and electrical properties of Zn-doped SnO₂and oxide/metal/oxide multilayer thin films deposited on flexible PET substrate

Yoonho Cho, Narendra S. Parmar, Sahn Nahm, Ji Won Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

As a potential replacement of indium-tin oxide (ITO), Zn-doped SnO₂/Ag/Zn-doped SnO₂multilayer transparent conducting electrodes were prepared on the flexible poly ethylene terephthalate (PET) substrates by RF sputtering at room temperature. To find the optimized composition of Zn-doped SnO₂thin film, which will have higher conductivity and transmittance as compared to the undoped SnO₂thin film, an off-axis Continuous Composition Spread (CCS) sputtering method was used. Zn-doped SnO₂thin films have lower resistivity than undoped SnO₂thin films due to excess oxygen vacancies (V_o) and/or zin interstitials (Zn_i) in thin films. The minimum resistivity of thin film was 0.13 Ω cm at optimized 2.43 wt% Zn-doping. Zn-doped SnO₂/Ag/Zn-doped SnO₂multilayer thin films were prepared using the optimized composition deposited by an on-axis RF sputter. The multilayer TCO film has the resistivity ∼5.33 × 10⁻⁵ Ω cm and the average transmittance >85% in the 550 nm wavelength region.

Original language	English
Pages (from-to)	217-222
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	694
DOIs	https://doi.org/10.1016/j.jallcom.2016.09.293
Publication status	Published - 2017

Keywords

CCS
Doping
OMO multilayer
Optical and electrical properties
SnO
TCO

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2016.09.293

Cite this

@article{64902875ba404b369261817c0478c409,

title = "Full range optical and electrical properties of Zn-doped SnO2and oxide/metal/oxide multilayer thin films deposited on flexible PET substrate",

abstract = "As a potential replacement of indium-tin oxide (ITO), Zn-doped SnO2/Ag/Zn-doped SnO2multilayer transparent conducting electrodes were prepared on the flexible poly ethylene terephthalate (PET) substrates by RF sputtering at room temperature. To find the optimized composition of Zn-doped SnO2thin film, which will have higher conductivity and transmittance as compared to the undoped SnO2thin film, an off-axis Continuous Composition Spread (CCS) sputtering method was used. Zn-doped SnO2thin films have lower resistivity than undoped SnO2thin films due to excess oxygen vacancies (Vo) and/or zin interstitials (Zni) in thin films. The minimum resistivity of thin film was 0.13 Ω cm at optimized 2.43 wt% Zn-doping. Zn-doped SnO2/Ag/Zn-doped SnO2multilayer thin films were prepared using the optimized composition deposited by an on-axis RF sputter. The multilayer TCO film has the resistivity ∼5.33 × 10−5 Ω cm and the average transmittance >85% in the 550 nm wavelength region.",

keywords = "CCS, Doping, OMO multilayer, Optical and electrical properties, SnO, TCO",

author = "Yoonho Cho and Parmar, {Narendra S.} and Sahn Nahm and Choi, {Ji Won}",

note = "Funding Information: This study was supported by the ATC program (No. 10048659 ) funded by the Ministry of Trade, Industry and Energy , and the KIST Future Resource Program ( 2E26370 ). Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2017",

doi = "10.1016/j.jallcom.2016.09.293",

language = "English",

volume = "694",

pages = "217--222",

journal = "Journal of Alloys and Compounds",

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T1 - Full range optical and electrical properties of Zn-doped SnO2and oxide/metal/oxide multilayer thin films deposited on flexible PET substrate

AU - Cho, Yoonho

AU - Parmar, Narendra S.

AU - Nahm, Sahn

AU - Choi, Ji Won

N1 - Funding Information: This study was supported by the ATC program (No. 10048659 ) funded by the Ministry of Trade, Industry and Energy , and the KIST Future Resource Program ( 2E26370 ). Publisher Copyright: © 2016 Elsevier B.V. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2017

Y1 - 2017

N2 - As a potential replacement of indium-tin oxide (ITO), Zn-doped SnO2/Ag/Zn-doped SnO2multilayer transparent conducting electrodes were prepared on the flexible poly ethylene terephthalate (PET) substrates by RF sputtering at room temperature. To find the optimized composition of Zn-doped SnO2thin film, which will have higher conductivity and transmittance as compared to the undoped SnO2thin film, an off-axis Continuous Composition Spread (CCS) sputtering method was used. Zn-doped SnO2thin films have lower resistivity than undoped SnO2thin films due to excess oxygen vacancies (Vo) and/or zin interstitials (Zni) in thin films. The minimum resistivity of thin film was 0.13 Ω cm at optimized 2.43 wt% Zn-doping. Zn-doped SnO2/Ag/Zn-doped SnO2multilayer thin films were prepared using the optimized composition deposited by an on-axis RF sputter. The multilayer TCO film has the resistivity ∼5.33 × 10−5 Ω cm and the average transmittance >85% in the 550 nm wavelength region.

AB - As a potential replacement of indium-tin oxide (ITO), Zn-doped SnO2/Ag/Zn-doped SnO2multilayer transparent conducting electrodes were prepared on the flexible poly ethylene terephthalate (PET) substrates by RF sputtering at room temperature. To find the optimized composition of Zn-doped SnO2thin film, which will have higher conductivity and transmittance as compared to the undoped SnO2thin film, an off-axis Continuous Composition Spread (CCS) sputtering method was used. Zn-doped SnO2thin films have lower resistivity than undoped SnO2thin films due to excess oxygen vacancies (Vo) and/or zin interstitials (Zni) in thin films. The minimum resistivity of thin film was 0.13 Ω cm at optimized 2.43 wt% Zn-doping. Zn-doped SnO2/Ag/Zn-doped SnO2multilayer thin films were prepared using the optimized composition deposited by an on-axis RF sputter. The multilayer TCO film has the resistivity ∼5.33 × 10−5 Ω cm and the average transmittance >85% in the 550 nm wavelength region.

KW - CCS

KW - Doping

KW - OMO multilayer

KW - Optical and electrical properties

KW - SnO

KW - TCO

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