Full split C-V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Minju Shin, Ming Shi, Mireille Mouis, Antoine Cros, Emmanuel Josse, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The feasibility of full split C-V method in ultra-thin body and BOX (UTBB) FDSOI devices is demonstrated, emphasizing the usefulness of gate-to-bulk capacitance. The split C-V measurements carried out on both gate-to-channel and gate-to-bulk mode are shown to be consistent with TCAD simulation. This enabled us to propose an improved parameter extraction methodology for the whole vertical FDSOI stack from gate to substrate using back biasing effect.

Original languageEnglish
Pages (from-to)104-107
Number of pages4
JournalSolid-State Electronics
Volume99
DOIs
Publication statusPublished - 2014 Sep

Keywords

  • MOS
  • SOI
  • Split CV
  • UTBB

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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