Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes

Kyeong Jae Byeon, Eun Ju Hong, Hyoungwon Park, Joong Yeon Cho, Seong Hwan Lee, Junggeun Jhin, Jong Hyeob Baek, Heon Lee

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A UV-imprinting process for a full wafer was developed to enhance the light extraction of GaN-based green light-emitting diodes (LEDs). A polyvinyl chloride flexible stamp was used in the imprinting process to compensate for the poor flatness of the LED wafer. Two-dimensional photonic crystal patterns with pitches ranging from 600 to 900 nm were formed on the p-GaN top cladding layer of a 2 inch diameter wafer using nanoimprint and reactive ion etching processes. As a result, the optical output power of the patterned LED device was increased by up to 44% at a driving current of 20 mA by suppressing the total internal reflection and enhancing the irregular scattering of photons at the patterned p-GaN surface.

Original languageEnglish
Pages (from-to)2241-2246
Number of pages6
JournalThin Solid Films
Volume519
Issue number7
DOIs
Publication statusPublished - 2011 Jan 31

Fingerprint

Nanoimprint lithography
Light emitting diodes
light emitting diodes
lithography
wafers
polyvinyl chloride
Reactive ion etching
flatness
Photonic crystals
Polyvinyl Chloride
Polyvinyl chlorides
Photons
etching
photonics
Scattering
output
photons
scattering
crystals
ions

Keywords

  • Full wafer scale
  • Gallium nitride
  • Light-emitting diodes
  • Nanoimprint
  • Photonic crystal

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Byeon, K. J., Hong, E. J., Park, H., Cho, J. Y., Lee, S. H., Jhin, J., ... Lee, H. (2011). Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes. Thin Solid Films, 519(7), 2241-2246. https://doi.org/10.1016/j.tsf.2010.10.039

Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes. / Byeon, Kyeong Jae; Hong, Eun Ju; Park, Hyoungwon; Cho, Joong Yeon; Lee, Seong Hwan; Jhin, Junggeun; Baek, Jong Hyeob; Lee, Heon.

In: Thin Solid Films, Vol. 519, No. 7, 31.01.2011, p. 2241-2246.

Research output: Contribution to journalArticle

Byeon, KJ, Hong, EJ, Park, H, Cho, JY, Lee, SH, Jhin, J, Baek, JH & Lee, H 2011, 'Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes', Thin Solid Films, vol. 519, no. 7, pp. 2241-2246. https://doi.org/10.1016/j.tsf.2010.10.039
Byeon KJ, Hong EJ, Park H, Cho JY, Lee SH, Jhin J et al. Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes. Thin Solid Films. 2011 Jan 31;519(7):2241-2246. https://doi.org/10.1016/j.tsf.2010.10.039
Byeon, Kyeong Jae ; Hong, Eun Ju ; Park, Hyoungwon ; Cho, Joong Yeon ; Lee, Seong Hwan ; Jhin, Junggeun ; Baek, Jong Hyeob ; Lee, Heon. / Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes. In: Thin Solid Films. 2011 ; Vol. 519, No. 7. pp. 2241-2246.
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