Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes

Kyeong Jae Byeon, Eun Ju Hong, Hyoungwon Park, Joong Yeon Cho, Seong Hwan Lee, Junggeun Jhin, Jong Hyeob Baek, Heon Lee

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A UV-imprinting process for a full wafer was developed to enhance the light extraction of GaN-based green light-emitting diodes (LEDs). A polyvinyl chloride flexible stamp was used in the imprinting process to compensate for the poor flatness of the LED wafer. Two-dimensional photonic crystal patterns with pitches ranging from 600 to 900 nm were formed on the p-GaN top cladding layer of a 2 inch diameter wafer using nanoimprint and reactive ion etching processes. As a result, the optical output power of the patterned LED device was increased by up to 44% at a driving current of 20 mA by suppressing the total internal reflection and enhancing the irregular scattering of photons at the patterned p-GaN surface.

Original languageEnglish
Pages (from-to)2241-2246
Number of pages6
JournalThin Solid Films
Volume519
Issue number7
DOIs
Publication statusPublished - 2011 Jan 31

Keywords

  • Full wafer scale
  • Gallium nitride
  • Light-emitting diodes
  • Nanoimprint
  • Photonic crystal

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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  • Cite this

    Byeon, K. J., Hong, E. J., Park, H., Cho, J. Y., Lee, S. H., Jhin, J., Baek, J. H., & Lee, H. (2011). Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes. Thin Solid Films, 519(7), 2241-2246. https://doi.org/10.1016/j.tsf.2010.10.039