Full wafer scale near zero residual nano-imprinting lithography using UV curable monomer solution

Heon Lee, Gun Young Jung

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

The nano-imprinting lithography is regarded as one of the most promising technologies for nano-sized pattern fabrication and is being focused as a key technology for the mass production. However, significant progress must be made to improve uniform imprinting over large area, low temperature and low pressure operation and imprinting with minimized residual layer. A unique pressure vessel type imprinting system was used to imprint the patterns as small as 150 nm over whole 4-in. diameter wafer with near zero residual layer. To cover the whole surface of 100 mm diameter Si wafer, an array of 18 mm by 18 mm quartz stamps was used as an imprint stamp. UV curable benzylmethacrylate (C 11H12O2) based monomer solution is used as an imprinting resin in this study. Near zero residual nano-imprinting over 100 mm diameter Si wafers was successfully demonstrated with 25 atm of imprinting pressure by using liquid state monomer based UV curable resin.

Original languageEnglish
Pages (from-to)42-47
Number of pages6
JournalMicroelectronic Engineering
Volume77
Issue number1
DOIs
Publication statusPublished - 2005 Jan

Keywords

  • Nano-imprint lithography
  • Residual layer
  • Self-assembled monolayer
  • UV curable resin

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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