Fully Ion-Implanted InP JFET with Buried p-Layer

Sung J. Kim; Jichai Jeong; G. P. Vella-Coleiro; P. R. Smith

doi:10.1109/55.46930

Fully Ion-Implanted InP JFET with Buried p-Layer

Sung J. Kim, Jichai Jeong, G. P. Vella-Coleiro, P. R. Smith

Department of Brain and Cognitive Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A buried p-layer has been successfully implemented in a fully ion implanted InP JFET for the first time. Using Be co-implanted with Si, a sharp channel profile is obtained. The saturation current has been reduced and the pinch-off characteristic has been improved with a slight decrease in transconductance and cutoff frequency. The equivalent circuits for the JFET with and without the buried p-layer are compared.

Original language	English
Pages (from-to)	57-58
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	11
Issue number	1
DOIs	https://doi.org/10.1109/55.46930
Publication status	Published - 1990 Jan

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "A buried p-layer has been successfully implemented in a fully ion implanted InP JFET for the first time. Using Be co-implanted with Si, a sharp channel profile is obtained. The saturation current has been reduced and the pinch-off characteristic has been improved with a slight decrease in transconductance and cutoff frequency. The equivalent circuits for the JFET with and without the buried p-layer are compared.",

author = "Kim, {Sung J.} and Jichai Jeong and Vella-Coleiro, {G. P.} and Smith, {P. R.}",

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AB - A buried p-layer has been successfully implemented in a fully ion implanted InP JFET for the first time. Using Be co-implanted with Si, a sharp channel profile is obtained. The saturation current has been reduced and the pinch-off characteristic has been improved with a slight decrease in transconductance and cutoff frequency. The equivalent circuits for the JFET with and without the buried p-layer are compared.

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Fully Ion-Implanted InP JFET with Buried p-Layer

Abstract

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