Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices

Sun Young Choi, Min Kyu Yang, Sangsig Kim, Jeon Kook Lee

Research output: Contribution to journalLetter

3 Citations (Scopus)

Abstract

The reliable resistive switching properties of TiN/TaOx/Pt structures fabricated with a fully room-temperature process are demonstrated in this letter. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to 105 cycles. No data loss was reported upon continuous readout for more than 104 s at 125 °C. Multilevel storage is feasible due to the dependence of the low resistance state (LRS) on the initial "SET" (switch from high to low RS) compliance current. The values of LRS showed no dependence on the size of the device, which correlated with the localized conductive filament mechanism. This nonvolatile multilevel memory effect and the fully room-temperature fabrication process make the TiN/TaOx/Pt memory devices promising for future nonvolatile memory application. Devices under study in this Letter show promising properties regarding reproducible switching, long retention times, nondestructive readout, and multilevel storage potential. Particular emphasis is put on the TiN electrode dependence of the electrical properties, with the observed excellent bipolar resistive switching attributed to oxygen reservoir effects.

Original languageEnglish
Pages (from-to)359-361
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume4
Issue number12
DOIs
Publication statusPublished - 2010 Dec 1

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Keywords

  • Non-volatile memory
  • Resistive switching
  • TaO
  • TiN
  • Transition metal oxides

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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