TY - JOUR
T1 - Fused Bithiophene Imide Dimer-Based n-Type Polymers for High-Performance Organic Electrochemical Transistors
AU - Feng, Kui
AU - Shan, Wentao
AU - Ma, Suxiang
AU - Wu, Ziang
AU - Chen, Jianhua
AU - Guo, Han
AU - Liu, Bin
AU - Wang, Junwei
AU - Li, Bangbang
AU - Woo, Han Young
AU - Fabiano, Simone
AU - Huang, Wei
AU - Guo, Xugang
N1 - Funding Information:
K.F. acknowledges the financial support by the National Natural Science Foundation of China (22005135), the Guangdong Basic and Applied Basic Research Foundation (2021A1515011640), and the Shenzhen Basic Research Fund (no. JCYJ20190809162003662). X.G. is thankful for the financial support from the National Natural Science Foundation of China (21774055) and the Shenzhen Basic Research Fund (JCYJ20180504165709042). We also acknowledge the support of Guangdong Provincial Key Laboratory Program (2021B1212040001) from the Department of Science and Technology of Guangdong Province. H.Y.W. acknowledges a financial support from the National Research Foundation (NRF) of Korea (2019R1A2C2085290, 2019R1A6A1A11044070). S.F. acknowledges financial support from the Swedish Research Council (2020‐03243) and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO‐Mat‐LiU 2009‐00971).
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/11/2
Y1 - 2021/11/2
N2 - The development of n-type organic electrochemical transistors (OECTs) lags far behind their p-type counterparts. In order to address this dilemma, we report here two new fused bithiophene imide dimer (f-BTI2)-based n-type polymers with a branched methyl end-capped glycol side chain, which exhibit good solubility, low-lying LUMO energy levels, favorable polymer chain orientation, and efficient ion transport property, thus yielding a remarkable OECT electron mobility (μe) of up to ≈10−2 cm2 V−1 s−1 and volumetric capacitance (C*) as high as 443 F cm−3, simultaneously. As a result, the f-BTI2TEG-FT-based OECTs deliver a record-high maximum geometry-normalized transconductance of 4.60 S cm−1 and a maximum μC* product of 15.2 F cm−1 V−1 s−1. The μC* figure of merit is more than one order of magnitude higher than that of the state-of-the-art n-type OECTs. The emergence of f-BTI2TEG-FT brings a new paradigm for developing high-performance n-type polymers for low-power OECT applications.
AB - The development of n-type organic electrochemical transistors (OECTs) lags far behind their p-type counterparts. In order to address this dilemma, we report here two new fused bithiophene imide dimer (f-BTI2)-based n-type polymers with a branched methyl end-capped glycol side chain, which exhibit good solubility, low-lying LUMO energy levels, favorable polymer chain orientation, and efficient ion transport property, thus yielding a remarkable OECT electron mobility (μe) of up to ≈10−2 cm2 V−1 s−1 and volumetric capacitance (C*) as high as 443 F cm−3, simultaneously. As a result, the f-BTI2TEG-FT-based OECTs deliver a record-high maximum geometry-normalized transconductance of 4.60 S cm−1 and a maximum μC* product of 15.2 F cm−1 V−1 s−1. The μC* figure of merit is more than one order of magnitude higher than that of the state-of-the-art n-type OECTs. The emergence of f-BTI2TEG-FT brings a new paradigm for developing high-performance n-type polymers for low-power OECT applications.
KW - electron mobility
KW - fused bithiophene imide dimer
KW - n-type polymer semiconductors
KW - organic electrochemical transistors
KW - organic electronics
UR - http://www.scopus.com/inward/record.url?scp=85116443879&partnerID=8YFLogxK
U2 - 10.1002/anie.202109281
DO - 10.1002/anie.202109281
M3 - Article
C2 - 34467624
AN - SCOPUS:85116443879
VL - 60
SP - 24198
EP - 24205
JO - Angewandte Chemie - International Edition
JF - Angewandte Chemie - International Edition
SN - 1433-7851
IS - 45
ER -