Ga ordering and electrical conductivity in nanotwin and superlattice-structured Ga-doped ZnO

Sang Won Yoon, Jong Hyun Seo, Tae Yeon Seong, Tae Hwan Yu, Yil Hwan You, Kon Bae Lee, Hoon Kwon, Jae Pyoung Ahn

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We have investigated the Ga-ordering controlled by structural changes from nanotwin to superlattice in Ga-doped ZnO (GZO) targets for transparent conductive oxides (TCOs) and discussed the distribution effect of Ga atoms on electrical conductivities of GZOs. The nanotwin and superlattice structures were preferentially formed by Ga-doping and sintering at high temperature. The relative fraction of nanotwin increased above transition concentration (TC ≈ 5.6 wt % Ga). Here, we found that Ga atoms at nanotwin are distributed as clustered and disordered states, while they are completely ordered in superlattice. Ultimately, the superlattice leads to high electrical conductivity in GZOs rather than the nanotwin.

Original languageEnglish
Pages (from-to)1167-1172
Number of pages6
JournalCrystal Growth and Design
Volume12
Issue number3
DOIs
Publication statusPublished - 2012 Mar 7

Fingerprint

Atoms
conductivity
electrical resistivity
Oxides
atoms
sintering
Sintering
Doping (additives)
oxides
Temperature
Electric Conductivity

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Ga ordering and electrical conductivity in nanotwin and superlattice-structured Ga-doped ZnO. / Yoon, Sang Won; Seo, Jong Hyun; Seong, Tae Yeon; Yu, Tae Hwan; You, Yil Hwan; Lee, Kon Bae; Kwon, Hoon; Ahn, Jae Pyoung.

In: Crystal Growth and Design, Vol. 12, No. 3, 07.03.2012, p. 1167-1172.

Research output: Contribution to journalArticle

Yoon, Sang Won ; Seo, Jong Hyun ; Seong, Tae Yeon ; Yu, Tae Hwan ; You, Yil Hwan ; Lee, Kon Bae ; Kwon, Hoon ; Ahn, Jae Pyoung. / Ga ordering and electrical conductivity in nanotwin and superlattice-structured Ga-doped ZnO. In: Crystal Growth and Design. 2012 ; Vol. 12, No. 3. pp. 1167-1172.
@article{b25bd4c565874541b6a65176d3910fce,
title = "Ga ordering and electrical conductivity in nanotwin and superlattice-structured Ga-doped ZnO",
abstract = "We have investigated the Ga-ordering controlled by structural changes from nanotwin to superlattice in Ga-doped ZnO (GZO) targets for transparent conductive oxides (TCOs) and discussed the distribution effect of Ga atoms on electrical conductivities of GZOs. The nanotwin and superlattice structures were preferentially formed by Ga-doping and sintering at high temperature. The relative fraction of nanotwin increased above transition concentration (TC ≈ 5.6 wt {\%} Ga). Here, we found that Ga atoms at nanotwin are distributed as clustered and disordered states, while they are completely ordered in superlattice. Ultimately, the superlattice leads to high electrical conductivity in GZOs rather than the nanotwin.",
author = "Yoon, {Sang Won} and Seo, {Jong Hyun} and Seong, {Tae Yeon} and Yu, {Tae Hwan} and You, {Yil Hwan} and Lee, {Kon Bae} and Hoon Kwon and Ahn, {Jae Pyoung}",
year = "2012",
month = "3",
day = "7",
doi = "10.1021/cg2010908",
language = "English",
volume = "12",
pages = "1167--1172",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "3",

}

TY - JOUR

T1 - Ga ordering and electrical conductivity in nanotwin and superlattice-structured Ga-doped ZnO

AU - Yoon, Sang Won

AU - Seo, Jong Hyun

AU - Seong, Tae Yeon

AU - Yu, Tae Hwan

AU - You, Yil Hwan

AU - Lee, Kon Bae

AU - Kwon, Hoon

AU - Ahn, Jae Pyoung

PY - 2012/3/7

Y1 - 2012/3/7

N2 - We have investigated the Ga-ordering controlled by structural changes from nanotwin to superlattice in Ga-doped ZnO (GZO) targets for transparent conductive oxides (TCOs) and discussed the distribution effect of Ga atoms on electrical conductivities of GZOs. The nanotwin and superlattice structures were preferentially formed by Ga-doping and sintering at high temperature. The relative fraction of nanotwin increased above transition concentration (TC ≈ 5.6 wt % Ga). Here, we found that Ga atoms at nanotwin are distributed as clustered and disordered states, while they are completely ordered in superlattice. Ultimately, the superlattice leads to high electrical conductivity in GZOs rather than the nanotwin.

AB - We have investigated the Ga-ordering controlled by structural changes from nanotwin to superlattice in Ga-doped ZnO (GZO) targets for transparent conductive oxides (TCOs) and discussed the distribution effect of Ga atoms on electrical conductivities of GZOs. The nanotwin and superlattice structures were preferentially formed by Ga-doping and sintering at high temperature. The relative fraction of nanotwin increased above transition concentration (TC ≈ 5.6 wt % Ga). Here, we found that Ga atoms at nanotwin are distributed as clustered and disordered states, while they are completely ordered in superlattice. Ultimately, the superlattice leads to high electrical conductivity in GZOs rather than the nanotwin.

UR - http://www.scopus.com/inward/record.url?scp=84863284795&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863284795&partnerID=8YFLogxK

U2 - 10.1021/cg2010908

DO - 10.1021/cg2010908

M3 - Article

VL - 12

SP - 1167

EP - 1172

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 3

ER -