Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3dB bandwidth of 1 GHz have been measured from the amplifiers.
- Field effect devices
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering