GaAs MESFET amplifiers fabricated on InP substrates

Jichai Jeong, G. P. Vella-Coleiro, C. M L Yee

Research output: Contribution to journalArticle

Abstract

Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3 dB bandwidth of 1 GHz have been measured from the amplifiers.

Original languageEnglish
Pages (from-to)135-136
Number of pages2
JournalElectronics Letters
Volume26
Issue number2
Publication statusPublished - 1990 Jan 1
Externally publishedYes

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Cutoff frequency
Transconductance
Field effect transistors
Short circuit currents
Bandwidth
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Jeong, J., Vella-Coleiro, G. P., & Yee, C. M. L. (1990). GaAs MESFET amplifiers fabricated on InP substrates. Electronics Letters, 26(2), 135-136.

GaAs MESFET amplifiers fabricated on InP substrates. / Jeong, Jichai; Vella-Coleiro, G. P.; Yee, C. M L.

In: Electronics Letters, Vol. 26, No. 2, 01.01.1990, p. 135-136.

Research output: Contribution to journalArticle

Jeong, J, Vella-Coleiro, GP & Yee, CML 1990, 'GaAs MESFET amplifiers fabricated on InP substrates', Electronics Letters, vol. 26, no. 2, pp. 135-136.
Jeong J, Vella-Coleiro GP, Yee CML. GaAs MESFET amplifiers fabricated on InP substrates. Electronics Letters. 1990 Jan 1;26(2):135-136.
Jeong, Jichai ; Vella-Coleiro, G. P. ; Yee, C. M L. / GaAs MESFET amplifiers fabricated on InP substrates. In: Electronics Letters. 1990 ; Vol. 26, No. 2. pp. 135-136.
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