GaAs MESFET's on InP substrates grown using chloride close-proximity reactor system

Jichai Jeong, C. M L Yee, G. P. Vella-Coleiro, P. R. Smith, S. N G Chu, P. S. Davisson, J. P. Paczkowski

Research output: Contribution to journalArticle

Abstract

DC and microwave characteristics of GaAs metal-semiconductor field-effect transistors (MESFETs) on InP grown using the chloride close-proximity reactor (CPR) system are reported. The FETs have an extrinsic maximum transconductance of 210 mS/mm for a drain saturation current of 110 mA/mm, a cutoff frequency of unity current gain of 13 GHz, and a maximum frequency of oscillation of 21 GHz. The dislocation density in a 1.6-μm GaAs layer on InP is 108 cm-2 measured from cross-sectional transmission electron miscroscopy (TEM). The full width at half maximum of (400) reflection is 270″ for a 3-μm-thick GaAs layer.

Original languageEnglish
Pages (from-to)285-287
Number of pages3
JournalElectron device letters
Volume11
Issue number7
Publication statusPublished - 1990 Jul 1
Externally publishedYes

Fingerprint

MESFET devices
Cutoff frequency
Transconductance
Field effect transistors
Full width at half maximum
Chlorides
Microwaves
Electrons
Substrates
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Jeong, J., Yee, C. M. L., Vella-Coleiro, G. P., Smith, P. R., Chu, S. N. G., Davisson, P. S., & Paczkowski, J. P. (1990). GaAs MESFET's on InP substrates grown using chloride close-proximity reactor system. Electron device letters, 11(7), 285-287.

GaAs MESFET's on InP substrates grown using chloride close-proximity reactor system. / Jeong, Jichai; Yee, C. M L; Vella-Coleiro, G. P.; Smith, P. R.; Chu, S. N G; Davisson, P. S.; Paczkowski, J. P.

In: Electron device letters, Vol. 11, No. 7, 01.07.1990, p. 285-287.

Research output: Contribution to journalArticle

Jeong, J, Yee, CML, Vella-Coleiro, GP, Smith, PR, Chu, SNG, Davisson, PS & Paczkowski, JP 1990, 'GaAs MESFET's on InP substrates grown using chloride close-proximity reactor system', Electron device letters, vol. 11, no. 7, pp. 285-287.
Jeong J, Yee CML, Vella-Coleiro GP, Smith PR, Chu SNG, Davisson PS et al. GaAs MESFET's on InP substrates grown using chloride close-proximity reactor system. Electron device letters. 1990 Jul 1;11(7):285-287.
Jeong, Jichai ; Yee, C. M L ; Vella-Coleiro, G. P. ; Smith, P. R. ; Chu, S. N G ; Davisson, P. S. ; Paczkowski, J. P. / GaAs MESFET's on InP substrates grown using chloride close-proximity reactor system. In: Electron device letters. 1990 ; Vol. 11, No. 7. pp. 285-287.
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AU - Chu, S. N G

AU - Davisson, P. S.

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