DC and microwave characteristics of GaAs metal-semiconductor field-effect transistors (MESFET's) on InP grown using the chloride close-proximity reactor (CPR) system are reported. The FET's have an extrinsic maximum transconductance of 210 mS/mm for a drain saturation current of 110 mA/mm, a cutoff frequency of unity current gain of 13 GHz, and a maximum frequency of oscillation of 21 GHz. The dislocation density in a 1.6-μm GaAs layer on InP is 108 cm-2 measured from cross-sectional TEM. The full width at half maximum of (400) reflection is 270” for a 3-μm-thick GaAs layer.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering