GaAs MESFET's on InP Substrates Grown Using Chloride Close-Proximity Reactor System

Jichai Jeong, C. M.L. Yee, G. P. Vella-Coleiro, P. R. Smith, S. N.G. Chu, P. S. Davisson, J. P. Paczkowski

Research output: Contribution to journalArticle

Abstract

DC and microwave characteristics of GaAs metal-semiconductor field-effect transistors (MESFET's) on InP grown using the chloride close-proximity reactor (CPR) system are reported. The FET's have an extrinsic maximum transconductance of 210 mS/mm for a drain saturation current of 110 mA/mm, a cutoff frequency of unity current gain of 13 GHz, and a maximum frequency of oscillation of 21 GHz. The dislocation density in a 1.6-μm GaAs layer on InP is 108 cm-2 measured from cross-sectional TEM. The full width at half maximum of (400) reflection is 270” for a 3-μm-thick GaAs layer.

Original languageEnglish
Pages (from-to)285-287
Number of pages3
JournalIEEE Electron Device Letters
Volume11
Issue number7
DOIs
Publication statusPublished - 1990 Jul

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Jeong, J., Yee, C. M. L., Vella-Coleiro, G. P., Smith, P. R., Chu, S. N. G., Davisson, P. S., & Paczkowski, J. P. (1990). GaAs MESFET's on InP Substrates Grown Using Chloride Close-Proximity Reactor System. IEEE Electron Device Letters, 11(7), 285-287. https://doi.org/10.1109/55.56476