GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates

Eun Kyu Kim, Tae Geun Kim, Chang Sik Son, Sung Min Hwang, Yong Kim, Young K. Park, Suk Ki Min

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Abstract

A well-defined selective GaAs epilayers were successfully grown on V-grooved GaAs substrates by single-stage atmospheric pressure metalorganic chemical vapor deposition (MOCVD) by supplying carbon tetrabromide (CBr 4) and carbon tetrachloride (CCl 4). Inside the V-grooves, the selectively grown GaAs epilayers exhibited a triangular and a round shape by supplying CBr 4 and CCl 4, respectively. By using this single-stage selective epitaxial growth technique, GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers were obtained. Room temperature operation was achieved at a wavelength of 869 nm with threshold currents as low as 43.5 mA (pulsed) and 59.9 mA (CW) for a 250 μm-long uncoated cavity.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume33
Issue numberSUPPL. 2
Publication statusPublished - 1998 Dec 1
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, E. K., Kim, T. G., Son, C. S., Hwang, S. M., Kim, Y., Park, Y. K., & Min, S. K. (1998). GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates. Journal of the Korean Physical Society, 33(SUPPL. 2).