GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates

Eun Kyu Kim, Tae Geun Kim, Chang Sik Son, Sung Min Hwang, Yong Kim, Young K. Park, Suk Ki Min

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A well-defined selective GaAs epilayers were successfully grown on V-grooved GaAs substrates by single-stage atmospheric pressure metalorganic chemical vapor deposition (MOCVD) by supplying carbon tetrabromide (CBr 4) and carbon tetrachloride (CCl 4). Inside the V-grooves, the selectively grown GaAs epilayers exhibited a triangular and a round shape by supplying CBr 4 and CCl 4, respectively. By using this single-stage selective epitaxial growth technique, GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers were obtained. Room temperature operation was achieved at a wavelength of 869 nm with threshold currents as low as 43.5 mA (pulsed) and 59.9 mA (CW) for a 250 μm-long uncoated cavity.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume33
Issue numberSUPPL. 2
Publication statusPublished - 1998 Dec 1
Externally publishedYes

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supplying
metalorganic chemical vapor deposition
aluminum gallium arsenides
V grooves
carbon tetrachloride
threshold currents
lasers
atmospheric pressure
cavities
carbon
room temperature
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, E. K., Kim, T. G., Son, C. S., Hwang, S. M., Kim, Y., Park, Y. K., & Min, S. K. (1998). GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates. Journal of the Korean Physical Society, 33(SUPPL. 2).

GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates. / Kim, Eun Kyu; Kim, Tae Geun; Son, Chang Sik; Hwang, Sung Min; Kim, Yong; Park, Young K.; Min, Suk Ki.

In: Journal of the Korean Physical Society, Vol. 33, No. SUPPL. 2, 01.12.1998.

Research output: Contribution to journalArticle

Kim, EK, Kim, TG, Son, CS, Hwang, SM, Kim, Y, Park, YK & Min, SK 1998, 'GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates', Journal of the Korean Physical Society, vol. 33, no. SUPPL. 2.
Kim, Eun Kyu ; Kim, Tae Geun ; Son, Chang Sik ; Hwang, Sung Min ; Kim, Yong ; Park, Young K. ; Min, Suk Ki. / GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates. In: Journal of the Korean Physical Society. 1998 ; Vol. 33, No. SUPPL. 2.
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