GaAs/AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique

Tae Geun Kim, Chang Sik Son, Eun Kyu Kim, Suk Ki Min, Jung ho Park

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We report single-stage selective MOCVD grown GaAs/AlGaAs buried channel stripe lasers with effective optical and current confinement in directions both perpendicular and parallel to the p-n junction. Fundamental transverse mode lasing up to 5 mW/facet, typical threshold current of 60 mA, nearly single-longitudinal-mode operation at a wavelength of 890.2 nm at 8 mW and an external differential quantum efficiency of 16%/facet have been achieved for a 250 μm long cavity under room-temperature CW operation. Maximum output power as high as 16.4 mW is obtained at 400 mA for a 800 μm long cavity. A tuning rate of the wavelength to temperature is interpolated to be about 0.32 nm °C -1 and the characteristic temperature T 0 is measured to be 102 K in the range of 25 to 65 °C for a 500 μm long cavity.

Original languageEnglish
Pages (from-to)570-574
Number of pages5
JournalSemiconductor Science and Technology
Issue number6
Publication statusPublished - 1999 Jun 1


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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