Gain-dependent linewidth enhancement factor in the quantum dot structures

Kyoung Chan Kim, Il Ki Han, Jung Il Lee, Tae Geun Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We measured the linewidth enhancement factor (α factor) of InAs quantum dot (QD) laser diodes (LDs) with two different QD structures. One is a normal QD LD with the same energy bandgap for each active QD layer, while the other is chirped with different energy bandgaps. The differential gain of the chirped InAs QD LDs is found to be about five times smaller than that of normal InAs QD LDs, whereas no overall wavelength shift with injection currents is observed in both QD LDs. The α factor is approximately five times higher in the chirped InAs QD LDs than in the normal InAs QD LDs. This relatively large α factor in the chirped InAs QD LDs is attributed to the asymmetrical, wide inhomogeneous gain profile.

Original languageEnglish
Article number134010
JournalNanotechnology
Volume21
Issue number13
DOIs
Publication statusPublished - 2010 Mar 19

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Quantum dot lasers
Quantum Dots
Semiconductor Lasers
Linewidth
Semiconductor quantum dots
Semiconductor lasers
Energy gap
indium arsenide
Wavelength

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Gain-dependent linewidth enhancement factor in the quantum dot structures. / Kim, Kyoung Chan; Han, Il Ki; Lee, Jung Il; Kim, Tae Geun.

In: Nanotechnology, Vol. 21, No. 13, 134010, 19.03.2010.

Research output: Contribution to journalArticle

Kim, Kyoung Chan ; Han, Il Ki ; Lee, Jung Il ; Kim, Tae Geun. / Gain-dependent linewidth enhancement factor in the quantum dot structures. In: Nanotechnology. 2010 ; Vol. 21, No. 13.
@article{d51449e26a3944a4843874c7e7dbb1a2,
title = "Gain-dependent linewidth enhancement factor in the quantum dot structures",
abstract = "We measured the linewidth enhancement factor (α factor) of InAs quantum dot (QD) laser diodes (LDs) with two different QD structures. One is a normal QD LD with the same energy bandgap for each active QD layer, while the other is chirped with different energy bandgaps. The differential gain of the chirped InAs QD LDs is found to be about five times smaller than that of normal InAs QD LDs, whereas no overall wavelength shift with injection currents is observed in both QD LDs. The α factor is approximately five times higher in the chirped InAs QD LDs than in the normal InAs QD LDs. This relatively large α factor in the chirped InAs QD LDs is attributed to the asymmetrical, wide inhomogeneous gain profile.",
author = "Kim, {Kyoung Chan} and Han, {Il Ki} and Lee, {Jung Il} and Kim, {Tae Geun}",
year = "2010",
month = "3",
day = "19",
doi = "10.1088/0957-4484/21/13/134010",
language = "English",
volume = "21",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "13",

}

TY - JOUR

T1 - Gain-dependent linewidth enhancement factor in the quantum dot structures

AU - Kim, Kyoung Chan

AU - Han, Il Ki

AU - Lee, Jung Il

AU - Kim, Tae Geun

PY - 2010/3/19

Y1 - 2010/3/19

N2 - We measured the linewidth enhancement factor (α factor) of InAs quantum dot (QD) laser diodes (LDs) with two different QD structures. One is a normal QD LD with the same energy bandgap for each active QD layer, while the other is chirped with different energy bandgaps. The differential gain of the chirped InAs QD LDs is found to be about five times smaller than that of normal InAs QD LDs, whereas no overall wavelength shift with injection currents is observed in both QD LDs. The α factor is approximately five times higher in the chirped InAs QD LDs than in the normal InAs QD LDs. This relatively large α factor in the chirped InAs QD LDs is attributed to the asymmetrical, wide inhomogeneous gain profile.

AB - We measured the linewidth enhancement factor (α factor) of InAs quantum dot (QD) laser diodes (LDs) with two different QD structures. One is a normal QD LD with the same energy bandgap for each active QD layer, while the other is chirped with different energy bandgaps. The differential gain of the chirped InAs QD LDs is found to be about five times smaller than that of normal InAs QD LDs, whereas no overall wavelength shift with injection currents is observed in both QD LDs. The α factor is approximately five times higher in the chirped InAs QD LDs than in the normal InAs QD LDs. This relatively large α factor in the chirped InAs QD LDs is attributed to the asymmetrical, wide inhomogeneous gain profile.

UR - http://www.scopus.com/inward/record.url?scp=77949404724&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949404724&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/21/13/134010

DO - 10.1088/0957-4484/21/13/134010

M3 - Article

C2 - 20208117

AN - SCOPUS:77949404724

VL - 21

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 13

M1 - 134010

ER -