Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency

Michael A. Mastro, Byung Jae Kim, Younghun Jung, Jennifer K. Hite, Charles R. Eddy, Ji Hyun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Gallium nitride light emitting diodes were deposited on a sapphire substrate that was pre-patterned with an ordered two-dimensional structure. The size and arrangement of the substrate surface pattern was designed to increase the diffraction and extraction of light from the device as well as define the grain size and thus dislocation density of the GaN crystal. A close-packing of self-assembled SiO2 nanospheres was used as the sacrificial etch mask. The etch process transferred a two-dimensional pattern into the sapphire substrate with a peak-to-peak dimension of approximately 250 nm. The distance was selected to match the emission wavelength in the crystal for optimal light scattering. Additionally, the dimensions of the crystal artificially defined the grain size of the GaN in contrast to the kinetically controlled grain size in a standard GaN on sapphire growth process.

Original languageEnglish
Pages (from-to)682-686
Number of pages5
JournalCurrent Applied Physics
Volume11
Issue number3
DOIs
Publication statusPublished - 2011 May 1

Fingerprint

Gallium nitride
Aluminum Oxide
gallium nitrides
Sapphire
emitters
sapphire
grain size
Crystals
Substrates
crystals
Nanospheres
Dislocations (crystals)
Light scattering
Light emitting diodes
Masks
light scattering
light emitting diodes
masks
Diffraction
Wavelength

Keywords

  • A. Semiconductors
  • B. Epitaxy
  • D. Recombination and trapping
  • E. Luminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency. / Mastro, Michael A.; Kim, Byung Jae; Jung, Younghun; Hite, Jennifer K.; Eddy, Charles R.; Kim, Ji Hyun.

In: Current Applied Physics, Vol. 11, No. 3, 01.05.2011, p. 682-686.

Research output: Contribution to journalArticle

Mastro, Michael A. ; Kim, Byung Jae ; Jung, Younghun ; Hite, Jennifer K. ; Eddy, Charles R. ; Kim, Ji Hyun. / Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency. In: Current Applied Physics. 2011 ; Vol. 11, No. 3. pp. 682-686.
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