Gallium nitride nanostructures for light-emitting diode applications

Moon Sung Kang; Chul Ho Lee; Jun Beom Park; Hyobin Yoo; Gyu Chul Yi

doi:10.1016/j.nanoen.2012.03.005

Gallium nitride nanostructures for light-emitting diode applications

Moon Sung Kang, Chul Ho Lee, Jun Beom Park, Hyobin Yoo, Gyu Chul Yi

Research output: Contribution to journal › Review article › peer-review

53 Citations (Scopus)

Abstract

This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a brief explanation of the basic components of the LED structure based on nitride nanostructures. Various device architectures of nanostructured GaN LEDs, as the main focus of the review, are then presented, covering research from the early LEDs based on a single GaN nanostructure to the most advanced LEDs based on GaN nanostructure arrays on flexible substrates. The research discussed in this review will promote novel applications of GaN LEDs that exploit the advantages of nanostructures.

Original language	English
Pages (from-to)	391-400
Number of pages	10
Journal	Nano Energy
Volume	1
Issue number	3
DOIs	https://doi.org/10.1016/j.nanoen.2012.03.005
Publication status	Published - 2012 May
Externally published	Yes

Keywords

Gallium nitride
Light-emitting diodes
Nanostructures

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Materials Science(all)
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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10.1016/j.nanoen.2012.03.005

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title = "Gallium nitride nanostructures for light-emitting diode applications",

abstract = "This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a brief explanation of the basic components of the LED structure based on nitride nanostructures. Various device architectures of nanostructured GaN LEDs, as the main focus of the review, are then presented, covering research from the early LEDs based on a single GaN nanostructure to the most advanced LEDs based on GaN nanostructure arrays on flexible substrates. The research discussed in this review will promote novel applications of GaN LEDs that exploit the advantages of nanostructures.",

keywords = "Gallium nitride, Light-emitting diodes, Nanostructures",

author = "Kang, {Moon Sung} and Lee, {Chul Ho} and Park, {Jun Beom} and Hyobin Yoo and Yi, {Gyu Chul}",

note = "Funding Information: This work was financially supported by the National Creative Research Initiative Project (Grant R16-2004-004-01001-0 ) of the Korea Science and Engineering Foundations (KOSEF) and the Future-based Technology Development Program (Nano Fields, 2010-0029325 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology . ",

year = "2012",

month = may,

doi = "10.1016/j.nanoen.2012.03.005",

language = "English",

volume = "1",

pages = "391--400",

journal = "Nano Energy",

issn = "2211-2855",

publisher = "Elsevier BV",

number = "3",

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T1 - Gallium nitride nanostructures for light-emitting diode applications

AU - Kang, Moon Sung

AU - Lee, Chul Ho

AU - Park, Jun Beom

AU - Yoo, Hyobin

AU - Yi, Gyu Chul

N1 - Funding Information: This work was financially supported by the National Creative Research Initiative Project (Grant R16-2004-004-01001-0 ) of the Korea Science and Engineering Foundations (KOSEF) and the Future-based Technology Development Program (Nano Fields, 2010-0029325 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology .

PY - 2012/5

Y1 - 2012/5

N2 - This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a brief explanation of the basic components of the LED structure based on nitride nanostructures. Various device architectures of nanostructured GaN LEDs, as the main focus of the review, are then presented, covering research from the early LEDs based on a single GaN nanostructure to the most advanced LEDs based on GaN nanostructure arrays on flexible substrates. The research discussed in this review will promote novel applications of GaN LEDs that exploit the advantages of nanostructures.

AB - This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a brief explanation of the basic components of the LED structure based on nitride nanostructures. Various device architectures of nanostructured GaN LEDs, as the main focus of the review, are then presented, covering research from the early LEDs based on a single GaN nanostructure to the most advanced LEDs based on GaN nanostructure arrays on flexible substrates. The research discussed in this review will promote novel applications of GaN LEDs that exploit the advantages of nanostructures.

KW - Gallium nitride

KW - Light-emitting diodes

KW - Nanostructures

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DO - 10.1016/j.nanoen.2012.03.005

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VL - 1

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EP - 400

JO - Nano Energy

JF - Nano Energy

SN - 2211-2855

IS - 3

ER -

Gallium nitride nanostructures for light-emitting diode applications

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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