Abstract
This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a brief explanation of the basic components of the LED structure based on nitride nanostructures. Various device architectures of nanostructured GaN LEDs, as the main focus of the review, are then presented, covering research from the early LEDs based on a single GaN nanostructure to the most advanced LEDs based on GaN nanostructure arrays on flexible substrates. The research discussed in this review will promote novel applications of GaN LEDs that exploit the advantages of nanostructures.
| Original language | English |
|---|---|
| Pages (from-to) | 391-400 |
| Number of pages | 10 |
| Journal | Nano Energy |
| Volume | 1 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2012 May 1 |
| Externally published | Yes |
Keywords
- Gallium nitride
- Light-emitting diodes
- Nanostructures
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Electrical and Electronic Engineering
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Cite this
Kang, M. S., Lee, C-H., Park, J. B., Yoo, H., & Yi, G. C. (2012). Gallium nitride nanostructures for light-emitting diode applications. Nano Energy, 1(3), 391-400. https://doi.org/10.1016/j.nanoen.2012.03.005