GaN-based light-emitting diode with three-dimensional silver reflectors

B. J. Kim, H. Jung, Sung Hyun Kim, Joona Bang, Ji Hyun Kim

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We present a simple and robust method to fabricate three-dimensional Ag reflectors on GaN light-emitting diodes (LEDs) using SiO2 nanospheres as the template. First, the hexagonal arrays of SiO2 nanosphere monolayer were spun-cast on a benzocyclobutene (BCB) layer, which was prepared on a sapphire surface. Then, the bottom half of the SiO2 nanospheres were embedded into the BCB layer after heating, resulting in arrays of "nano-lenses" that were in the shape of convex hemispheres. The concave-shaped hemisphere arrays were produced by etching the SiO2 nanospheres with an HF solution. Ag was deposited onto both patterns, concave and convex hemispheres, resulting in the formation of three-dimensional Ag reflectors. From the electroluminescence measurements, these Ag reflectors, which contained either concave or convex hemisphere patterns, were found to enhance the light output of GaN LEDs by as much as 29%-33%.

Original languageEnglish
Pages (from-to)700-702
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number11
DOIs
Publication statusPublished - 2009 Jun 1

Fingerprint

Nanospheres
hemispheres
Silver
reflectors
Light emitting diodes
light emitting diodes
silver
Aluminum Oxide
Electroluminescence
Sapphire
electroluminescence
casts
Etching
Lenses
Monolayers
sapphire
templates
lenses
etching
Heating

Keywords

  • Light extraction efficiency
  • Light-emitting diodes (LEDs)
  • Reflector

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

GaN-based light-emitting diode with three-dimensional silver reflectors. / Kim, B. J.; Jung, H.; Kim, Sung Hyun; Bang, Joona; Kim, Ji Hyun.

In: IEEE Photonics Technology Letters, Vol. 21, No. 11, 01.06.2009, p. 700-702.

Research output: Contribution to journalArticle

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AB - We present a simple and robust method to fabricate three-dimensional Ag reflectors on GaN light-emitting diodes (LEDs) using SiO2 nanospheres as the template. First, the hexagonal arrays of SiO2 nanosphere monolayer were spun-cast on a benzocyclobutene (BCB) layer, which was prepared on a sapphire surface. Then, the bottom half of the SiO2 nanospheres were embedded into the BCB layer after heating, resulting in arrays of "nano-lenses" that were in the shape of convex hemispheres. The concave-shaped hemisphere arrays were produced by etching the SiO2 nanospheres with an HF solution. Ag was deposited onto both patterns, concave and convex hemispheres, resulting in the formation of three-dimensional Ag reflectors. From the electroluminescence measurements, these Ag reflectors, which contained either concave or convex hemisphere patterns, were found to enhance the light output of GaN LEDs by as much as 29%-33%.

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