GaN-based light emitting diode with transparent nanoparticles-embedded p-ohmic electrode

June O. Song, Hun Kang, David Nicol, Ian T. Ferguson, Hyun Gi Hong, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Optoelectronics related to GaN-based semiconductors (i.e., InGaN, GaN, and AlGaN) are new technologies that have the potential to far exceed the energy efficiencies of incandescent and fluorescent lighting sources. Among the GaN-based optoelectronic devices like light emitting diode (LED) and laser diode (LD), the GaN-based LEDs are of interest for the next generation illumination because of the representative characteristics such as small, highly radiant, reliably long, and fast responding, compared with the existing general lighting systems. Achievement of high luminous intensity by flip-chip LED (FCLED) with Ag-metallic reflector or using top emitting LED (TELED) with highly transparent ITO contact is required to improve the external quantum efficiency (EQE) and light output of GaN-based LEDs. However, since the work function of Ag and ITO is lower than 5.0 eV, it is difficult to produce low-resistance p-ohmic electrode with Ag-metallic reflector or ITO only. In this paper, in order to develop new ohmic contact materials having low contact resistance and high transmittance, transparent nanoparticles-embedded p-ohmic electrode was suggested in the scheme of Mg-doped indium oxide (MIO) (3 nm)/indium tin oxide (ITO) (400 nm) ohmic contact for high brightness TELEDs for solid-state lighting. The MIO/ITO contact become ohmic with specific contact resistances of 2.64 × 10 -3 Ωcm 2 and give transmittance higher than 94.6% at a wavelength of 450 nm when annealed at 630°C for 1 min in air. GaN-based LEDs fabricated with the annealed MIO/ITO p-contact layer give a forward-bias voltage of about 3.38 V at injection current of 20 mA. It is further shown that the output power of the LEDs with the MIO/ITO contact is enhanced by about 1.86 times at 20 mA as compared with that of LEDs with the conventional Ni/Au contact.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages369-374
Number of pages6
Volume892
Publication statusPublished - 2006 May 15
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 2

Other

Other2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period05/11/2805/12/2

Fingerprint

Indium
Light emitting diodes
Nanoparticles
Tin oxides
Electrodes
Ohmic contacts
Lighting
Contact resistance
Optoelectronic devices
Oxides
Acoustic impedance
Bias voltage
indium tin oxide
Quantum efficiency
Energy efficiency
Light sources
Semiconductor lasers
Luminance
Semiconductor materials
Wavelength

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Song, J. O., Kang, H., Nicol, D., Ferguson, I. T., Hong, H. G., & Seong, T. Y. (2006). GaN-based light emitting diode with transparent nanoparticles-embedded p-ohmic electrode. In Materials Research Society Symposium Proceedings (Vol. 892, pp. 369-374)

GaN-based light emitting diode with transparent nanoparticles-embedded p-ohmic electrode. / Song, June O.; Kang, Hun; Nicol, David; Ferguson, Ian T.; Hong, Hyun Gi; Seong, Tae Yeon.

Materials Research Society Symposium Proceedings. Vol. 892 2006. p. 369-374.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Song, JO, Kang, H, Nicol, D, Ferguson, IT, Hong, HG & Seong, TY 2006, GaN-based light emitting diode with transparent nanoparticles-embedded p-ohmic electrode. in Materials Research Society Symposium Proceedings. vol. 892, pp. 369-374, 2005 Materials Research Society Fall Meeting, Boston, MA, United States, 05/11/28.
Song JO, Kang H, Nicol D, Ferguson IT, Hong HG, Seong TY. GaN-based light emitting diode with transparent nanoparticles-embedded p-ohmic electrode. In Materials Research Society Symposium Proceedings. Vol. 892. 2006. p. 369-374
Song, June O. ; Kang, Hun ; Nicol, David ; Ferguson, Ian T. ; Hong, Hyun Gi ; Seong, Tae Yeon. / GaN-based light emitting diode with transparent nanoparticles-embedded p-ohmic electrode. Materials Research Society Symposium Proceedings. Vol. 892 2006. pp. 369-374
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abstract = "Optoelectronics related to GaN-based semiconductors (i.e., InGaN, GaN, and AlGaN) are new technologies that have the potential to far exceed the energy efficiencies of incandescent and fluorescent lighting sources. Among the GaN-based optoelectronic devices like light emitting diode (LED) and laser diode (LD), the GaN-based LEDs are of interest for the next generation illumination because of the representative characteristics such as small, highly radiant, reliably long, and fast responding, compared with the existing general lighting systems. Achievement of high luminous intensity by flip-chip LED (FCLED) with Ag-metallic reflector or using top emitting LED (TELED) with highly transparent ITO contact is required to improve the external quantum efficiency (EQE) and light output of GaN-based LEDs. However, since the work function of Ag and ITO is lower than 5.0 eV, it is difficult to produce low-resistance p-ohmic electrode with Ag-metallic reflector or ITO only. In this paper, in order to develop new ohmic contact materials having low contact resistance and high transmittance, transparent nanoparticles-embedded p-ohmic electrode was suggested in the scheme of Mg-doped indium oxide (MIO) (3 nm)/indium tin oxide (ITO) (400 nm) ohmic contact for high brightness TELEDs for solid-state lighting. The MIO/ITO contact become ohmic with specific contact resistances of 2.64 × 10 -3 Ωcm 2 and give transmittance higher than 94.6{\%} at a wavelength of 450 nm when annealed at 630°C for 1 min in air. GaN-based LEDs fabricated with the annealed MIO/ITO p-contact layer give a forward-bias voltage of about 3.38 V at injection current of 20 mA. It is further shown that the output power of the LEDs with the MIO/ITO contact is enhanced by about 1.86 times at 20 mA as compared with that of LEDs with the conventional Ni/Au contact.",
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AB - Optoelectronics related to GaN-based semiconductors (i.e., InGaN, GaN, and AlGaN) are new technologies that have the potential to far exceed the energy efficiencies of incandescent and fluorescent lighting sources. Among the GaN-based optoelectronic devices like light emitting diode (LED) and laser diode (LD), the GaN-based LEDs are of interest for the next generation illumination because of the representative characteristics such as small, highly radiant, reliably long, and fast responding, compared with the existing general lighting systems. Achievement of high luminous intensity by flip-chip LED (FCLED) with Ag-metallic reflector or using top emitting LED (TELED) with highly transparent ITO contact is required to improve the external quantum efficiency (EQE) and light output of GaN-based LEDs. However, since the work function of Ag and ITO is lower than 5.0 eV, it is difficult to produce low-resistance p-ohmic electrode with Ag-metallic reflector or ITO only. In this paper, in order to develop new ohmic contact materials having low contact resistance and high transmittance, transparent nanoparticles-embedded p-ohmic electrode was suggested in the scheme of Mg-doped indium oxide (MIO) (3 nm)/indium tin oxide (ITO) (400 nm) ohmic contact for high brightness TELEDs for solid-state lighting. The MIO/ITO contact become ohmic with specific contact resistances of 2.64 × 10 -3 Ωcm 2 and give transmittance higher than 94.6% at a wavelength of 450 nm when annealed at 630°C for 1 min in air. GaN-based LEDs fabricated with the annealed MIO/ITO p-contact layer give a forward-bias voltage of about 3.38 V at injection current of 20 mA. It is further shown that the output power of the LEDs with the MIO/ITO contact is enhanced by about 1.86 times at 20 mA as compared with that of LEDs with the conventional Ni/Au contact.

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