GaN-based light-emitting diodes on graphenecoated flexible substrates

Gwangseok Yang, Younghun Jung, Camilo Vélez Cuervo, Fan Ren, Stephen J. Pearton, Jihyun Kim

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9 Citations (Scopus)

Abstract

We demonstrate GaN-based thin light-emitting diodes (LEDs) on flexible polymer and paper substrates covered with chemical vapor deposited graphene as a transparent-conductive layer. Thin LEDs were fabricated by lifting the sapphire substrate off by Excimer laser heating, followed by transfer of the LEDs to the flexible substrates. These substrates were coated with tri-layer graphene by a wet transfer method. Optical and electrical properties of thin laser lift-offed LEDs on the flexible substrates were characterized under both relaxed and strained conditions. The graphene on paper substrates remained conducting when the graphene/paper structure was folded. The high transmittance, low sheet resistance and high failure strain of the graphene make it an ideal candidate as the transparent and conductive layer in flexible optoelectronics.

Original languageEnglish
Pages (from-to)A812-A817
JournalOptics Express
Volume22
Issue numberSUPPL. 3
DOIs
Publication statusPublished - 2014

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Yang, G., Jung, Y., Cuervo, C. V., Ren, F., Pearton, S. J., & Kim, J. (2014). GaN-based light-emitting diodes on graphenecoated flexible substrates. Optics Express, 22(SUPPL. 3), A812-A817. https://doi.org/10.1364/OE.22.00A812