GaN enhancement mode metal-oxide semiconductor field effect transistors

Y. Irokawa, Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

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4 Citations (Scopus)

Abstract

The initial demonstration of an enhancement mode MgO/p-GaN metal-oxide semiconductor field effect transistor (MOSFET) utilizing Si+ ion implanted regions under the source and drain to provide a source of minority carriers for inversion was reported. The breakdown voltage for an 80 nm thick MgO gate dielectric was ∼14 V, corresponding to a breakdown field strength of 1.75 MVcm-1 and the p-n junction formed between the p-epi and the source had a reverse breakdown voltage >15 V. Inversion of the channel was achieved for gate voltages above 6 V.The maximum transconductance was 5.4 μSmm-1 at a drain-source voltage of 5 V.

Original languageEnglish
Pages (from-to)2668-2671
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number7
DOIs
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Irokawa, Y., Nakano, Y., Ishiko, M., Kachi, T., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Pan, C. C., Chen, G. T., & Chyi, J. I. (2005). GaN enhancement mode metal-oxide semiconductor field effect transistors. Physica Status Solidi C: Conferences, 2(7), 2668-2671. https://doi.org/10.1002/pssc.200461280