GaN nano-column growth on a Si(111) substrate by using a Pt+Ga alloy seeding method with MOCVD

Eun Su Jang, Seon Ho Lee, Heon Song, Kannappan Santhakumar, Dong Wook Kim, Jin Soo Kim, In Hwan Lee, Cheul Ro Lee, Jooln Lee

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1 Citation (Scopus)

Abstract

Gallium-nitride nano-column arrays were grown on a platinum-coated Si(111) substrate by using the Pt+GaN alloy seeding method with metal-organic chemical vapor deposition (MOCVD). Two important growth parameters were considered, the pre-deposition of the Ga source prior to generating the droplets and the droplet formation temperature. The surface morphology and the optical characterization of the grown GaN nano-columns were studied using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL). The SEM image reveals the vertical growth of GaN nano-columns. The growth of the GaN nano-columns was confirmed by EDX, which indicated that they were composed of gallium and nitrogen. The PL spectrum reveal a sharp peak at 366.7 nm with a full width at half maximum (FWHM) of 160 meV, which clearly indicated that the grown GaN nano-columns were highly crystalline in nature.

Original languageEnglish
Pages (from-to)2692-2695
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number5 PART 1
DOIs
Publication statusPublished - 2008 Nov
Externally publishedYes

Keywords

  • GaN
  • MOCVD
  • Nano-column
  • PL
  • Pt coating
  • SEM

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Jang, E. S., Lee, S. H., Song, H., Santhakumar, K., Kim, D. W., Kim, J. S., Lee, I. H., Lee, C. R., & Lee, J. (2008). GaN nano-column growth on a Si(111) substrate by using a Pt+Ga alloy seeding method with MOCVD. Journal of the Korean Physical Society, 53(5 PART 1), 2692-2695. https://doi.org/10.3938/jkps.53.2692