GaN nano-column growth on a Si(111) substrate by using a Pt+Ga alloy seeding method with MOCVD

Eun Su Jang, Seon Ho Lee, Heon Song, Kannappan Santhakumar, Dong Wook Kim, Jin Soo Kim, In-Hwan Lee, Cheul Ro Lee, Jooln Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Gallium-nitride nano-column arrays were grown on a platinum-coated Si(111) substrate by using the Pt+GaN alloy seeding method with metal-organic chemical vapor deposition (MOCVD). Two important growth parameters were considered, the pre-deposition of the Ga source prior to generating the droplets and the droplet formation temperature. The surface morphology and the optical characterization of the grown GaN nano-columns were studied using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL). The SEM image reveals the vertical growth of GaN nano-columns. The growth of the GaN nano-columns was confirmed by EDX, which indicated that they were composed of gallium and nitrogen. The PL spectrum reveal a sharp peak at 366.7 nm with a full width at half maximum (FWHM) of 160 meV, which clearly indicated that the grown GaN nano-columns were highly crystalline in nature.

Original languageEnglish
Pages (from-to)2692-2695
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number5 PART 1
Publication statusPublished - 2008 Nov 1
Externally publishedYes

Fingerprint

inoculation
metalorganic chemical vapor deposition
photoluminescence
scanning electron microscopy
gallium nitrides
spectroscopy
gallium
platinum
x rays
nitrogen
energy
temperature

Keywords

  • GaN
  • MOCVD
  • Nano-column
  • PL
  • Pt coating
  • SEM

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Jang, E. S., Lee, S. H., Song, H., Santhakumar, K., Kim, D. W., Kim, J. S., ... Lee, J. (2008). GaN nano-column growth on a Si(111) substrate by using a Pt+Ga alloy seeding method with MOCVD. Journal of the Korean Physical Society, 53(5 PART 1), 2692-2695.

GaN nano-column growth on a Si(111) substrate by using a Pt+Ga alloy seeding method with MOCVD. / Jang, Eun Su; Lee, Seon Ho; Song, Heon; Santhakumar, Kannappan; Kim, Dong Wook; Kim, Jin Soo; Lee, In-Hwan; Lee, Cheul Ro; Lee, Jooln.

In: Journal of the Korean Physical Society, Vol. 53, No. 5 PART 1, 01.11.2008, p. 2692-2695.

Research output: Contribution to journalArticle

Jang, ES, Lee, SH, Song, H, Santhakumar, K, Kim, DW, Kim, JS, Lee, I-H, Lee, CR & Lee, J 2008, 'GaN nano-column growth on a Si(111) substrate by using a Pt+Ga alloy seeding method with MOCVD', Journal of the Korean Physical Society, vol. 53, no. 5 PART 1, pp. 2692-2695.
Jang ES, Lee SH, Song H, Santhakumar K, Kim DW, Kim JS et al. GaN nano-column growth on a Si(111) substrate by using a Pt+Ga alloy seeding method with MOCVD. Journal of the Korean Physical Society. 2008 Nov 1;53(5 PART 1):2692-2695.
Jang, Eun Su ; Lee, Seon Ho ; Song, Heon ; Santhakumar, Kannappan ; Kim, Dong Wook ; Kim, Jin Soo ; Lee, In-Hwan ; Lee, Cheul Ro ; Lee, Jooln. / GaN nano-column growth on a Si(111) substrate by using a Pt+Ga alloy seeding method with MOCVD. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 5 PART 1. pp. 2692-2695.
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