GaN nanowire lasers with low lasing thresholds

Silvija Gradečak, Fang Qian, Yat Li, Hong Kyu Park, Charles M. Lieber

Research output: Contribution to journalArticle

398 Citations (Scopus)

Abstract

We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar 〈11-20〉 direction, have single-crystal structures and triangular cross sections. The nanowires function as free-standing Fabry-Ṕrot cavities with cavity mode spacings that depend inversely on length. Optical excitation studies demonstrate thresholds for stimulated emission of 22 kW cm2 that are substantially lower than other previously reported GaN nanowires. Key contributions to low threshold lasing in these MOCVD GaN nanowire cavities and the development of electrically pumped GaN nanowire lasers are discussed.

Original languageEnglish
Article number173111
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number17
DOIs
Publication statusPublished - 2005 Oct 24
Externally publishedYes

Fingerprint

lasing
nanowires
thresholds
lasers
cavities
metalorganic chemical vapor deposition
stimulated emission
electron microscopy
spacing
crystal structure
single crystals
cross sections
room temperature
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gradečak, S., Qian, F., Li, Y., Park, H. K., & Lieber, C. M. (2005). GaN nanowire lasers with low lasing thresholds. Applied Physics Letters, 87(17), 1-3. [173111]. https://doi.org/10.1063/1.2115087

GaN nanowire lasers with low lasing thresholds. / Gradečak, Silvija; Qian, Fang; Li, Yat; Park, Hong Kyu; Lieber, Charles M.

In: Applied Physics Letters, Vol. 87, No. 17, 173111, 24.10.2005, p. 1-3.

Research output: Contribution to journalArticle

Gradečak, S, Qian, F, Li, Y, Park, HK & Lieber, CM 2005, 'GaN nanowire lasers with low lasing thresholds', Applied Physics Letters, vol. 87, no. 17, 173111, pp. 1-3. https://doi.org/10.1063/1.2115087
Gradečak S, Qian F, Li Y, Park HK, Lieber CM. GaN nanowire lasers with low lasing thresholds. Applied Physics Letters. 2005 Oct 24;87(17):1-3. 173111. https://doi.org/10.1063/1.2115087
Gradečak, Silvija ; Qian, Fang ; Li, Yat ; Park, Hong Kyu ; Lieber, Charles M. / GaN nanowire lasers with low lasing thresholds. In: Applied Physics Letters. 2005 ; Vol. 87, No. 17. pp. 1-3.
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