GaN nanowire lasers with low lasing thresholds

Silvija Gradečak, Fang Qian, Yat Li, Hong Kyu Park, Charles M. Lieber

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Abstract

We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar 〈11-20〉 direction, have single-crystal structures and triangular cross sections. The nanowires function as free-standing Fabry-Ṕrot cavities with cavity mode spacings that depend inversely on length. Optical excitation studies demonstrate thresholds for stimulated emission of 22 kW cm2 that are substantially lower than other previously reported GaN nanowires. Key contributions to low threshold lasing in these MOCVD GaN nanowire cavities and the development of electrically pumped GaN nanowire lasers are discussed.

Original languageEnglish
Article number173111
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number17
DOIs
Publication statusPublished - 2005 Oct 24
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gradečak, S., Qian, F., Li, Y., Park, H. K., & Lieber, C. M. (2005). GaN nanowire lasers with low lasing thresholds. Applied Physics Letters, 87(17), 1-3. [173111]. https://doi.org/10.1063/1.2115087