GaN nanowires with Au + Ga solid solution grown on an Si(111) substrate by metalorganic chemical vapor deposition

Eun Su Jang, Yong Ho Ra, Young Min Lee, Seok Hyo Yun, Dong Wook Kim, R. Navamathavan, Jin Soo Kim, In-Hwan Lee, Cheul Ro Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, gallium nitride (GaN) nanowire (NW) arrays were grown on a gold-coated Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). The important parameter that decides the density of GaN NWs was considered to be growth temperature. Therefore, in order to study the effect of growth temperature, we grew GaN NWs at various growth temperatures, namely, 800, 850, 900, 950, and 1000 °C, under identical growth conditions. The optimum growth temperature was observed to be 950 °C, and the diameters of the grown GaN NWs were in the range from 80 to 250 nm, and the average length was 3 μm. The surface morphology and optical characterization of the grown GaN NWs were studied by field emission scanning electron microscope (FE-SEM), photoluminescence (PL), and cathodoluminescence (CL), respectively. Energy dispersive X-ray spectroscopy (EDX) analysis confirmed the presence of gallium and nitrogen in the grown NWs. The PL and CL spectra revealed sharp peaks at 366nm with a full width at half maximum (FWHM) of 102meV and at 3.36 eV with a FWHM of 85 meV, respectively, indicating that the grown GaN NWs were highly crystalline.

Original languageEnglish
Pages (from-to)910011-910014
Number of pages4
JournalJapanese Journal of Applied Physics
Volume48
Issue number9 Part 1
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes

Fingerprint

Gallium nitride
gallium nitrides
Metallorganic chemical vapor deposition
Nanowires
metalorganic chemical vapor deposition
Solid solutions
nanowires
solid solutions
Growth temperature
Substrates
Cathodoluminescence
Full width at half maximum
cathodoluminescence
Photoluminescence
photoluminescence
temperature
Gallium
Field emission
gallium
Surface morphology

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Jang, E. S., Ra, Y. H., Lee, Y. M., Yun, S. H., Kim, D. W., Navamathavan, R., ... Lee, C. R. (2009). GaN nanowires with Au + Ga solid solution grown on an Si(111) substrate by metalorganic chemical vapor deposition. Japanese Journal of Applied Physics, 48(9 Part 1), 910011-910014. https://doi.org/10.1143/JJAP.48.091001

GaN nanowires with Au + Ga solid solution grown on an Si(111) substrate by metalorganic chemical vapor deposition. / Jang, Eun Su; Ra, Yong Ho; Lee, Young Min; Yun, Seok Hyo; Kim, Dong Wook; Navamathavan, R.; Kim, Jin Soo; Lee, In-Hwan; Lee, Cheul Ro.

In: Japanese Journal of Applied Physics, Vol. 48, No. 9 Part 1, 01.12.2009, p. 910011-910014.

Research output: Contribution to journalArticle

Jang, ES, Ra, YH, Lee, YM, Yun, SH, Kim, DW, Navamathavan, R, Kim, JS, Lee, I-H & Lee, CR 2009, 'GaN nanowires with Au + Ga solid solution grown on an Si(111) substrate by metalorganic chemical vapor deposition', Japanese Journal of Applied Physics, vol. 48, no. 9 Part 1, pp. 910011-910014. https://doi.org/10.1143/JJAP.48.091001
Jang, Eun Su ; Ra, Yong Ho ; Lee, Young Min ; Yun, Seok Hyo ; Kim, Dong Wook ; Navamathavan, R. ; Kim, Jin Soo ; Lee, In-Hwan ; Lee, Cheul Ro. / GaN nanowires with Au + Ga solid solution grown on an Si(111) substrate by metalorganic chemical vapor deposition. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 9 Part 1. pp. 910011-910014.
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