GaN nanowire/thin film vertical structure p-n junction light-emitting diodes

Young Joon Hong, Chul Ho Lee, Jun Beom Park, Sung Jin An, Gyu Chul Yi

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Here, we report vertical-type GaN nanowire-based light-emitting diodes (LEDs) fabricated by the metal-catalyzed vapor-liquid-solid (VLS) method. The nickel-catalyzed VLS process yielded both n-GaN nanowires and GaN nanoislands on substrates. The nanoislands markedly deteriorated the diode and electroluminescent characteristics in n-nanowire/p-film LED structures because of parasitic resistance and deep level emission caused by nanoislands. By burying the nanoislands with an insulating layer and adopting coaxial p-n junction nanowire structures, nanowire-based LEDs were shown to exhibit superior device performance, including highly rectifying and monochromatic electroluminescent characteristics. Thus, the undesirable effects associated with nanoislands were considerably suppressed. This work provides a rationale for designing high-performance vertical nanowire-based LEDs.

Original languageEnglish
Article number261116
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 2013 Dec 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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