Gan power rectifiers and field-effect transistors on free-standing gan substrates

Y. Irokawa, B. Luo, Jihyun Kim, B. S. Kang, J. R. Laroche, F. Ren, C. C. Pan, G. T. Chen, J. I. Chyi, S. S. Park, Y. J. Park, B. P. Gila, C. R. Abernathy, K. H. Baik, S. J. Pearton

Research output: Contribution to conferencePaper

Abstract

There are emerging applications for GaN and electronics in control and switching of electric power in the utilities industry, advanced radar sub-systems, and in the drive-trains of hybrid electric vehicles. The key components of the inverter modules for such applications are the power rectifier and transistor. P-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage was ∼5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance was ∼5 mΩ·cm 2 at 300 K. The figure-of-merit was 0.32 MW·cm 2. The reverse recovery time was ≤ 600 ns at 300 K. A comparison of the DC and pulsed characteristics of AlGaN/GaN HFETs on both GaN and Al 2O 3 substrates before and after Sc 2O 3 passivation was performed. HFETs on GaN substrates show less electron accumulation in the gate-drain surface region than do comparable devices on Al 2O 3 substrates.

Original languageEnglish
Pages306-320
Number of pages15
Publication statusPublished - 2003
Externally publishedYes
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period03/10/1203/10/17

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Gan power rectifiers and field-effect transistors on free-standing gan substrates'. Together they form a unique fingerprint.

  • Cite this

    Irokawa, Y., Luo, B., Kim, J., Kang, B. S., Laroche, J. R., Ren, F., Pan, C. C., Chen, G. T., Chyi, J. I., Park, S. S., Park, Y. J., Gila, B. P., Abernathy, C. R., Baik, K. H., & Pearton, S. J. (2003). Gan power rectifiers and field-effect transistors on free-standing gan substrates. 306-320. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.