Gan power rectifiers and field-effect transistors on free-standing gan substrates

Y. Irokawa, B. Luo, Jihyun Kim, B. S. Kang, J. R. Laroche, F. Ren, C. C. Pan, G. T. Chen, J. I. Chyi, S. S. Park, Y. J. Park, B. P. Gila, C. R. Abernathy, K. H. Baik, S. J. Pearton

Research output: Contribution to conference › Paper › peer-review

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Engineering & Materials Science