GaNAs as strain compensating layer for 1.55μm light emission from InAs quantum dots

Sasikala Ganapathy, Xi Qing Zhang, Ikuo Suemune, Katsuhiro Uesugi, Hidekazu Kumano, B. J. Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

GaNAs strain-compensating layers (SCLs) are applied to bury InAs quantum dots (QDs) grown on GaAs substrates. The main idea is the compensation of the compressive strain induced by InAs QDs with the tensile strain in the GaNAs SCLs to keep the total strain of the system minimum. The application of the GaNAs SCLs resulted in a systematic shift of photoluminescence (PL) peaks of the InAs QDs toward the longer wavelengths with the increase of the nitrogen (N) composition in GaNAs, and luminescence at a wavelength of 1.55 μm has been achieved from the InAs QDs for the N composition of 2.7% in the GaNAs SCL. This result is promising for the application of GaNAs SCL for InAs-QDs-based long-wavelength light sources for optical-fiber communication systems.

Original languageEnglish
Pages (from-to)5598-5601
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number9 A
DOIs
Publication statusPublished - 2003 Sep
Externally publishedYes

Keywords

  • GaNAs
  • InAs quantum dot
  • Long-wavelength
  • Photoluminescence
  • Strain compensating layer (SCL)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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