GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays

Chul Ho Lee, Jinkyoung Yoo, Young Joon Hong, Jeonghui Cho, Yong Jin Kim, Seong Ran Jeon, Jong Hyeob Baek, Gyu Chul Yi

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61 Citations (Scopus)

Abstract

We studied the fabrication and electroluminescent (EL) characteristics of GaN/ In1-x Gax N/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n -GaN, GaN/ In0.24 Ga0.76 N multiquantum well (MQW) structures and p -GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c -plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/ In0.24 Ga0.76 N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.

Original languageEnglish
Article number213101
JournalApplied Physics Letters
Volume94
Issue number21
DOIs
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Lee, C. H., Yoo, J., Hong, Y. J., Cho, J., Kim, Y. J., Jeon, S. R., Baek, J. H., & Yi, G. C. (2009). GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays. Applied Physics Letters, 94(21), [213101]. https://doi.org/10.1063/1.3139865