We report the fabrication and luminescent characteristics of GaN-based visible light-emitting diode (LED) arrays on Si substrates. For the fabrication of the LEDs, high-quality GaN/ZnO coaxial nanotube heterostructures were prepared by the heteroepitaxial growth of GaN layers on position-controlled ZnO nanotube arrays grown on 1-m-thick crack-free GaN/Si substrates. The nanostructured LEDs were composed of GaN-based p-n homojunction with GaN/In 1-xGaxN multiple quantum wells (MQWs) coaxially coated on GaN/ZnO nanotube heterostructures. The fabricated micro-LEDs emitted visible green light that originated from the MQWs of individual coaxial LEDs. In addition, the origin of the light emission was investigated by measuring cathodoluminescence and electroluminescence spectra.
|Number of pages||5|
|Journal||IEEE Journal on Selected Topics in Quantum Electronics|
|Publication status||Published - 2011 Jul 1|
- Light-emitting diode (LED)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics