GaN/ZnO nanotube heterostructure light-emitting diodes fabricated on Si

Chul-Ho Lee, Young Joon Hong, Yong Jin Kim, Jinkyoung Yoo, Hyeonjun Baek, Seong Ran Jeon, Seung Jae Lee, Gyu Chul Yi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report the fabrication and luminescent characteristics of GaN-based visible light-emitting diode (LED) arrays on Si substrates. For the fabrication of the LEDs, high-quality GaN/ZnO coaxial nanotube heterostructures were prepared by the heteroepitaxial growth of GaN layers on position-controlled ZnO nanotube arrays grown on 1-m-thick crack-free GaN/Si substrates. The nanostructured LEDs were composed of GaN-based p-n homojunction with GaN/In 1-xGaxN multiple quantum wells (MQWs) coaxially coated on GaN/ZnO nanotube heterostructures. The fabricated micro-LEDs emitted visible green light that originated from the MQWs of individual coaxial LEDs. In addition, the origin of the light emission was investigated by measuring cathodoluminescence and electroluminescence spectra.

Original languageEnglish
Article number5579990
Pages (from-to)966-970
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume17
Issue number4
DOIs
Publication statusPublished - 2011 Jul 1
Externally publishedYes

    Fingerprint

Keywords

  • Light-emitting diode (LED)
  • nanoepitaxy
  • nanophotonics
  • Si
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Lee, C-H., Hong, Y. J., Kim, Y. J., Yoo, J., Baek, H., Jeon, S. R., Lee, S. J., & Yi, G. C. (2011). GaN/ZnO nanotube heterostructure light-emitting diodes fabricated on Si. IEEE Journal on Selected Topics in Quantum Electronics, 17(4), 966-970. [5579990]. https://doi.org/10.1109/JSTQE.2010.2062493