Gapless point back surface field for the counter doping of large-area interdigitated back contact solar cells using a blanket shadow mask implantation process

Young Su Kim, Chanbin Mo, Doo Youl Lee, Sung Chan Park, Dongseop Kim, Junggyu Nam, Jung Yup Yang, Dongchul Suh, Hyun Jong Kim, Hyomin Park, Se Jin Park, Donghwan Kim, Jungho Song, Hae Seok Lee, Sungeun Park, Yoonmook Kang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Gapless interdigitated back contact (IBC) solar cells were fabricated with phosphorous back surface field on a boron emitter, using an ion implantation process. Boron emitter (boron ion implantation) is counter doped by the phosphorus back surface field (BSF) (phosphorus ion implantation) without gap. The gapless process step between the emitter and BSF was compared to existing IBC solar cell with gaps between emitters and BSFs obtained using diffusion processes. We optimized the doping process in the phosphorous BSF and boron emitter region, and the implied Voc and contact resistance relationship of the phosphorous and boron implantation dose in the counter doped region was analyzed. We confirmed the shunt resistance of the gapless IBC solar cells and the possibility of shunt behavior in gapless IBC solar cells. The highly doped counter doped BSF led to a controlled junction breakdown at high reverse bias voltages of around 7.5 V. After the doping region was optimized with the counter doped BSF and emitter, a large-area (5 inch pseudo square) gapless IBC solar cell with a power conversion efficiency of 22.9% was made.

Original languageEnglish
Pages (from-to)989-995
Number of pages7
JournalProgress in Photovoltaics: Research and Applications
Volume25
Issue number12
DOIs
Publication statusPublished - 2017 Dec

Keywords

  • IBC solar cells
  • counter doping
  • gapless doping
  • ion implantation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Kim, Y. S., Mo, C., Lee, D. Y., Park, S. C., Kim, D., Nam, J., Yang, J. Y., Suh, D., Kim, H. J., Park, H., Park, S. J., Kim, D., Song, J., Lee, H. S., Park, S., & Kang, Y. (2017). Gapless point back surface field for the counter doping of large-area interdigitated back contact solar cells using a blanket shadow mask implantation process. Progress in Photovoltaics: Research and Applications, 25(12), 989-995. https://doi.org/10.1002/pip.2910