Gapless point back surface field for the counter doping of large-area interdigitated back contact solar cells using a blanket shadow mask implantation process

Young Su Kim, Chanbin Mo, Doo Youl Lee, Sung Chan Park, Dongseop Kim, Junggyu Nam, Jungyup Yang, Dongchul Suh, Hyun Jong Kim, Hyomin Park, Se Jin Park, Donghwan Kim, Jungho Song, Haeseok Lee, Sungeun Park, Yoon Mook Kang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Gapless interdigitated back contact (IBC) solar cells were fabricated with phosphorous back surface field on a boron emitter, using an ion implantation process. Boron emitter (boron ion implantation) is counter doped by the phosphorus back surface field (BSF) (phosphorus ion implantation) without gap. The gapless process step between the emitter and BSF was compared to existing IBC solar cell with gaps between emitters and BSFs obtained using diffusion processes. We optimized the doping process in the phosphorous BSF and boron emitter region, and the implied Voc and contact resistance relationship of the phosphorous and boron implantation dose in the counter doped region was analyzed. We confirmed the shunt resistance of the gapless IBC solar cells and the possibility of shunt behavior in gapless IBC solar cells. The highly doped counter doped BSF led to a controlled junction breakdown at high reverse bias voltages of around 7.5 V. After the doping region was optimized with the counter doped BSF and emitter, a large-area (5 inch pseudo square) gapless IBC solar cell with a power conversion efficiency of 22.9% was made.

Original languageEnglish
JournalProgress in Photovoltaics: Research and Applications
DOIs
Publication statusAccepted/In press - 2017

Fingerprint

blankets
Boron
Masks
implantation
Solar cells
emitters
counters
masks
solar cells
Doping (additives)
boron
Ion implantation
ion implantation
shunts
Phosphorus
phosphorus
Contact resistance
Bias voltage
contact resistance
Conversion efficiency

Keywords

  • Counter doping
  • Gapless doping
  • IBC solar cells
  • Ion implantation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Gapless point back surface field for the counter doping of large-area interdigitated back contact solar cells using a blanket shadow mask implantation process. / Kim, Young Su; Mo, Chanbin; Lee, Doo Youl; Park, Sung Chan; Kim, Dongseop; Nam, Junggyu; Yang, Jungyup; Suh, Dongchul; Kim, Hyun Jong; Park, Hyomin; Park, Se Jin; Kim, Donghwan; Song, Jungho; Lee, Haeseok; Park, Sungeun; Kang, Yoon Mook.

In: Progress in Photovoltaics: Research and Applications, 2017.

Research output: Contribution to journalArticle

Kim, Young Su ; Mo, Chanbin ; Lee, Doo Youl ; Park, Sung Chan ; Kim, Dongseop ; Nam, Junggyu ; Yang, Jungyup ; Suh, Dongchul ; Kim, Hyun Jong ; Park, Hyomin ; Park, Se Jin ; Kim, Donghwan ; Song, Jungho ; Lee, Haeseok ; Park, Sungeun ; Kang, Yoon Mook. / Gapless point back surface field for the counter doping of large-area interdigitated back contact solar cells using a blanket shadow mask implantation process. In: Progress in Photovoltaics: Research and Applications. 2017.
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abstract = "Gapless interdigitated back contact (IBC) solar cells were fabricated with phosphorous back surface field on a boron emitter, using an ion implantation process. Boron emitter (boron ion implantation) is counter doped by the phosphorus back surface field (BSF) (phosphorus ion implantation) without gap. The gapless process step between the emitter and BSF was compared to existing IBC solar cell with gaps between emitters and BSFs obtained using diffusion processes. We optimized the doping process in the phosphorous BSF and boron emitter region, and the implied Voc and contact resistance relationship of the phosphorous and boron implantation dose in the counter doped region was analyzed. We confirmed the shunt resistance of the gapless IBC solar cells and the possibility of shunt behavior in gapless IBC solar cells. The highly doped counter doped BSF led to a controlled junction breakdown at high reverse bias voltages of around 7.5 V. After the doping region was optimized with the counter doped BSF and emitter, a large-area (5 inch pseudo square) gapless IBC solar cell with a power conversion efficiency of 22.9{\%} was made.",
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T1 - Gapless point back surface field for the counter doping of large-area interdigitated back contact solar cells using a blanket shadow mask implantation process

AU - Kim, Young Su

AU - Mo, Chanbin

AU - Lee, Doo Youl

AU - Park, Sung Chan

AU - Kim, Dongseop

AU - Nam, Junggyu

AU - Yang, Jungyup

AU - Suh, Dongchul

AU - Kim, Hyun Jong

AU - Park, Hyomin

AU - Park, Se Jin

AU - Kim, Donghwan

AU - Song, Jungho

AU - Lee, Haeseok

AU - Park, Sungeun

AU - Kang, Yoon Mook

PY - 2017

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N2 - Gapless interdigitated back contact (IBC) solar cells were fabricated with phosphorous back surface field on a boron emitter, using an ion implantation process. Boron emitter (boron ion implantation) is counter doped by the phosphorus back surface field (BSF) (phosphorus ion implantation) without gap. The gapless process step between the emitter and BSF was compared to existing IBC solar cell with gaps between emitters and BSFs obtained using diffusion processes. We optimized the doping process in the phosphorous BSF and boron emitter region, and the implied Voc and contact resistance relationship of the phosphorous and boron implantation dose in the counter doped region was analyzed. We confirmed the shunt resistance of the gapless IBC solar cells and the possibility of shunt behavior in gapless IBC solar cells. The highly doped counter doped BSF led to a controlled junction breakdown at high reverse bias voltages of around 7.5 V. After the doping region was optimized with the counter doped BSF and emitter, a large-area (5 inch pseudo square) gapless IBC solar cell with a power conversion efficiency of 22.9% was made.

AB - Gapless interdigitated back contact (IBC) solar cells were fabricated with phosphorous back surface field on a boron emitter, using an ion implantation process. Boron emitter (boron ion implantation) is counter doped by the phosphorus back surface field (BSF) (phosphorus ion implantation) without gap. The gapless process step between the emitter and BSF was compared to existing IBC solar cell with gaps between emitters and BSFs obtained using diffusion processes. We optimized the doping process in the phosphorous BSF and boron emitter region, and the implied Voc and contact resistance relationship of the phosphorous and boron implantation dose in the counter doped region was analyzed. We confirmed the shunt resistance of the gapless IBC solar cells and the possibility of shunt behavior in gapless IBC solar cells. The highly doped counter doped BSF led to a controlled junction breakdown at high reverse bias voltages of around 7.5 V. After the doping region was optimized with the counter doped BSF and emitter, a large-area (5 inch pseudo square) gapless IBC solar cell with a power conversion efficiency of 22.9% was made.

KW - Counter doping

KW - Gapless doping

KW - IBC solar cells

KW - Ion implantation

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