GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

Sang Hoon Shin; Youn Ho Park; Hyun Cheol Koo; Yun Heub Song; Jin Dong Song

doi:10.1016/j.cap.2017.03.018

GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

Sang Hoon Shin, Youn Ho Park, Hyun Cheol Koo, Yun Heub Song, Jin Dong Song

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results.The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm²/Vs and high carrier concentration of 4.3 × 10¹²/cm² at RT.

Original language	English
Journal	Current Applied Physics
DOIs	https://doi.org/10.1016/j.cap.2017.03.018
Publication status	Accepted/In press - 2017 Jan 16

Keywords

2DHG
GaSb
Hole mobility
III-V CMOS
Lattice mismatch

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2017.03.018

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Shin, S. H., Park, Y. H., Koo, H. C., Song, Y. H., & Song, J. D. (Accepted/In press). GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications. Current Applied Physics. https://doi.org/10.1016/j.cap.2017.03.018

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abstract = "We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results.The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.",

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AU - Shin, Sang Hoon

AU - Park, Youn Ho

AU - Koo, Hyun Cheol

AU - Song, Yun Heub

AU - Song, Jin Dong

PY - 2017/1/16

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N2 - We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results.The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.

AB - We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results.The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.

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KW - Hole mobility

KW - III-V CMOS

KW - Lattice mismatch

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