GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

Sang Hoon Shin, Youn Ho Park, Hyun Cheol Koo, Yun Heub Song, Jin Dong Song

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results.The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.

Original languageEnglish
JournalCurrent Applied Physics
DOIs
Publication statusAccepted/In press - 2017 Jan 16

Keywords

  • 2DHG
  • GaSb
  • Hole mobility
  • III-V CMOS
  • Lattice mismatch

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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