GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

Sang Hoon Shin, Youn Ho Park, Hyun Cheol Koo, Yun Heub Song, Jin Dong Song

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results.The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.

Original languageEnglish
JournalCurrent Applied Physics
DOIs
Publication statusAccepted/In press - 2017 Jan 16

Fingerprint

Semiconductor quantum wells
CMOS
Gases
Doping (additives)
Lattice mismatch
Hole mobility
Substrates
Valence bands
Conduction bands
gases
Molecular beam epitaxy
quantum wells
modulation doping
Carrier concentration
Electric properties
Modulation
hole mobility
conduction bands
molecular beam epitaxy
electrical properties

Keywords

  • 2DHG
  • GaSb
  • Hole mobility
  • III-V CMOS
  • Lattice mismatch

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications. / Shin, Sang Hoon; Park, Youn Ho; Koo, Hyun Cheol; Song, Yun Heub; Song, Jin Dong.

In: Current Applied Physics, 16.01.2017.

Research output: Contribution to journal › Article

Shin, SH, Park, YH, Koo, HC, Song, YH & Song, JD 2017, 'GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications', Current Applied Physics. https://doi.org/10.1016/j.cap.2017.03.018
Shin SH, Park YH, Koo HC, Song YH, Song JD. GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications. Current Applied Physics. 2017 Jan 16. https://doi.org/10.1016/j.cap.2017.03.018
Shin, Sang Hoon ; Park, Youn Ho ; Koo, Hyun Cheol ; Song, Yun Heub ; Song, Jin Dong. / GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications. In: Current Applied Physics. 2017.
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AU - Song, Jin Dong

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AB - We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results.The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.

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