Ga2O3:ITO transparent conducting electrodes for near-ultraviolet light-emitting diodes

Su Jin Kim, Sang Young Park, Kyeong Heon Kim, Suk Won Kim, Tae Geun Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Herein, a Ga2O3-based indium tin oxide Ga 2O3ITO thin film is proposed as a replacement for ITO in near-ultraviolet light-emitting diodes (NUV LEDs), and its electrical and optical properties are optimized. The measured sheet resistance and optical transmittance of the Ga2O3ITO thin film were 49 Ω sq and 93.8% at 405 nm wavelength after optimization, whereas those of ITO films were 52 Ω sq and 84.4% at that wavelength, respectively. In addition, we found that at 20 mA the output power of the NUV LEDs with Ga2O 3:ITO top electrodes was 55% greater than that of those with ITO top electrodes.

Original languageEnglish
Article number6698329
Pages (from-to)232-234
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number2
DOIs
Publication statusPublished - 2014 Feb

Keywords

  • GaO:ITO
  • Ultraviolet light-emitting diode
  • cosputtering
  • transparent conducting electrode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Ga<sub>2</sub>O<sub>3</sub>:ITO transparent conducting electrodes for near-ultraviolet light-emitting diodes'. Together they form a unique fingerprint.

  • Cite this