Herein, a Ga2O3-based indium tin oxide Ga 2O3ITO thin film is proposed as a replacement for ITO in near-ultraviolet light-emitting diodes (NUV LEDs), and its electrical and optical properties are optimized. The measured sheet resistance and optical transmittance of the Ga2O3ITO thin film were 49 Ω sq and 93.8% at 405 nm wavelength after optimization, whereas those of ITO films were 52 Ω sq and 84.4% at that wavelength, respectively. In addition, we found that at 20 mA the output power of the NUV LEDs with Ga2O 3:ITO top electrodes was 55% greater than that of those with ITO top electrodes.
- Ultraviolet light-emitting diode
- transparent conducting electrode
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering