Gate all around metal oxide field transistor: Surface potential calculation method including doping and interface trap charge and the effect of interface trap charge on subthreshold slope

Faraz Najam, Sangsig Kim, Yun Seop Yu

Research output: Contribution to journalArticle

6 Citations (Scopus)


An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

Original languageEnglish
Pages (from-to)530-537
Number of pages8
JournalJournal of Semiconductor Technology and Science
Issue number5
Publication statusPublished - 2013 Oct 1



  • Compact model
  • Drain-source current
  • Gate-all-around metal-oxide-semiconductor-field-effect-transistor (GAAMOSFET)
  • Interface trap distribution
  • Scaling theory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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