Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes

Yun-Hi Lee, Sungim Park

Research output: Contribution to journalArticle

Abstract

Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 °C and characterized the produced devices consisting of a p +-Si contact electrode, a suspended Si nanochannel, and a polysilicon contact electrode. Both the electrodes and connecting lines are made of Si-based materials by conventional low-pressure chemical vapor deposition. The results indicate that these devices can act as gate-controllable Schottky diodes in integrated nanocircuits.

Original languageEnglish
Article number065004
JournalScience and Technology of Advanced Materials
Volume12
Issue number6
DOIs
Publication statusPublished - 2011 Dec 1

Fingerprint

Silicon
Polysilicon
Nanowires
Electrodes
Low pressure chemical vapor deposition
Integrated circuits
Diodes
Thin films
Catalysts

Keywords

  • low-pressure chemical vapor deposition
  • LPCVD
  • nanowire junction
  • Si nanowires

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes. / Lee, Yun-Hi; Park, Sungim.

In: Science and Technology of Advanced Materials, Vol. 12, No. 6, 065004, 01.12.2011.

Research output: Contribution to journalArticle

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