Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures

Kyung Ho Kim, Youn Ho Park, Hyun Cheol Koo, Joonyeon Chang, Young-geun Kim, Hyung Jun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (α) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of α in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of α directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.

Original languageEnglish
Pages (from-to)5212-5215
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number7
DOIs
Publication statusPublished - 2014 Jan 1

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Orbit
Semiconductor quantum wells
Orbits
quantum wells
orbits
controllability
Controllability
Magnetoelectronics
Electron mobility
Contact resistance
contact resistance
electron mobility
Electrons
narrowband
Energy gap
Equipment and Supplies
Electric fields
indium arsenide
electric fields

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures. / Kim, Kyung Ho; Park, Youn Ho; Koo, Hyun Cheol; Chang, Joonyeon; Kim, Young-geun; Kim, Hyung Jun.

In: Journal of Nanoscience and Nanotechnology, Vol. 14, No. 7, 01.01.2014, p. 5212-5215.

Research output: Contribution to journalArticle

Kim, Kyung Ho ; Park, Youn Ho ; Koo, Hyun Cheol ; Chang, Joonyeon ; Kim, Young-geun ; Kim, Hyung Jun. / Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures. In: Journal of Nanoscience and Nanotechnology. 2014 ; Vol. 14, No. 7. pp. 5212-5215.
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