Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures

Kyung Ho Kim, Youn Ho Park, Hyun Cheol Koo, Joonyeon Chang, Young-geun Kim, Hyung Jun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (α) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of α in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of α directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.

Original languageEnglish
Pages (from-to)5212-5215
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number7
DOIs
Publication statusPublished - 2014 Jan 1

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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