Gate-controlled spin-orbit interaction in InAs high-electron mobility transistor layers epitaxially transferred onto Si substrates

Kyung Ho Kim, Doo Seung Um, Hochan Lee, Seongdong Lim, Joonyeon Chang, Hyun Cheol Koo, Min Wook Oh, Hyunhyub Ko, Hyung Jun Kim

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11 Citations (Scopus)

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