Gate-field dependent photosensitivity of soluble 1,2,4,5-tetra(5′- hexyl- [2, 2′] terthiophenyl-5-vinyl)-benzene based organic thin film transistors

Mi Yeon Cho, Kihyun Kim, Su Jin Kim, Seong Gi Jo, Kyung Hwan Kim, Ki Hwa Jung, Dong Hoon Choi, Sangsig Kim, Jinsoo Joo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The photoresponsive current-voltage characteristics of organic thin film transistors (OTFTs) have been studied as a function of gate-bias. For the active layer of the OTFTs, soluble 1,2,4,5-tetra(5′ -hexyl- [2, 2′] terthiophenyl-5-vinyl)-benzene materials have been used, and the thickness of the active layers varied. The photosensitivity of the OTFTs was controlled through both gate-bias (Vg) and incident light power. With increasing incident light power, the photosensitivity decreased during the source-drain current actively varied with Vg [i.e., at on-state with accumulated hole channel (Vg < Vonset)], while it increased for Vg≥Vonset (at off-state without accumulated hole channel). These variations are caused by two kinds of photocurrent mechanisms: One based on the photovoltaic effect for Vg < Vonset and another based on the photoconductive effect for Vg V onset. The maximum photosensitivity of OTFTs was found to be approximately 40 times higher in the on-state than in the off-state due to the contribution of photovoltaic effect in the on-state.

Original languageEnglish
Article number023703
JournalJournal of Applied Physics
Volume108
Issue number2
DOIs
Publication statusPublished - 2010 Jul 15

Fingerprint

photosensitivity
transistors
benzene
photovoltaic effect
thin films
photocurrents
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Gate-field dependent photosensitivity of soluble 1,2,4,5-tetra(5′- hexyl- [2, 2′] terthiophenyl-5-vinyl)-benzene based organic thin film transistors. / Cho, Mi Yeon; Kim, Kihyun; Kim, Su Jin; Jo, Seong Gi; Kim, Kyung Hwan; Jung, Ki Hwa; Choi, Dong Hoon; Kim, Sangsig; Joo, Jinsoo.

In: Journal of Applied Physics, Vol. 108, No. 2, 023703, 15.07.2010.

Research output: Contribution to journalArticle

@article{25a263b713344875a5630ed5121ce2ba,
title = "Gate-field dependent photosensitivity of soluble 1,2,4,5-tetra(5′- hexyl- [2, 2′] terthiophenyl-5-vinyl)-benzene based organic thin film transistors",
abstract = "The photoresponsive current-voltage characteristics of organic thin film transistors (OTFTs) have been studied as a function of gate-bias. For the active layer of the OTFTs, soluble 1,2,4,5-tetra(5′ -hexyl- [2, 2′] terthiophenyl-5-vinyl)-benzene materials have been used, and the thickness of the active layers varied. The photosensitivity of the OTFTs was controlled through both gate-bias (Vg) and incident light power. With increasing incident light power, the photosensitivity decreased during the source-drain current actively varied with Vg [i.e., at on-state with accumulated hole channel (Vg < Vonset)], while it increased for Vg≥Vonset (at off-state without accumulated hole channel). These variations are caused by two kinds of photocurrent mechanisms: One based on the photovoltaic effect for Vg < Vonset and another based on the photoconductive effect for Vg V onset. The maximum photosensitivity of OTFTs was found to be approximately 40 times higher in the on-state than in the off-state due to the contribution of photovoltaic effect in the on-state.",
author = "Cho, {Mi Yeon} and Kihyun Kim and Kim, {Su Jin} and Jo, {Seong Gi} and Kim, {Kyung Hwan} and Jung, {Ki Hwa} and Choi, {Dong Hoon} and Sangsig Kim and Jinsoo Joo",
year = "2010",
month = "7",
day = "15",
doi = "10.1063/1.3456498",
language = "English",
volume = "108",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Gate-field dependent photosensitivity of soluble 1,2,4,5-tetra(5′- hexyl- [2, 2′] terthiophenyl-5-vinyl)-benzene based organic thin film transistors

AU - Cho, Mi Yeon

AU - Kim, Kihyun

AU - Kim, Su Jin

AU - Jo, Seong Gi

AU - Kim, Kyung Hwan

AU - Jung, Ki Hwa

AU - Choi, Dong Hoon

AU - Kim, Sangsig

AU - Joo, Jinsoo

PY - 2010/7/15

Y1 - 2010/7/15

N2 - The photoresponsive current-voltage characteristics of organic thin film transistors (OTFTs) have been studied as a function of gate-bias. For the active layer of the OTFTs, soluble 1,2,4,5-tetra(5′ -hexyl- [2, 2′] terthiophenyl-5-vinyl)-benzene materials have been used, and the thickness of the active layers varied. The photosensitivity of the OTFTs was controlled through both gate-bias (Vg) and incident light power. With increasing incident light power, the photosensitivity decreased during the source-drain current actively varied with Vg [i.e., at on-state with accumulated hole channel (Vg < Vonset)], while it increased for Vg≥Vonset (at off-state without accumulated hole channel). These variations are caused by two kinds of photocurrent mechanisms: One based on the photovoltaic effect for Vg < Vonset and another based on the photoconductive effect for Vg V onset. The maximum photosensitivity of OTFTs was found to be approximately 40 times higher in the on-state than in the off-state due to the contribution of photovoltaic effect in the on-state.

AB - The photoresponsive current-voltage characteristics of organic thin film transistors (OTFTs) have been studied as a function of gate-bias. For the active layer of the OTFTs, soluble 1,2,4,5-tetra(5′ -hexyl- [2, 2′] terthiophenyl-5-vinyl)-benzene materials have been used, and the thickness of the active layers varied. The photosensitivity of the OTFTs was controlled through both gate-bias (Vg) and incident light power. With increasing incident light power, the photosensitivity decreased during the source-drain current actively varied with Vg [i.e., at on-state with accumulated hole channel (Vg < Vonset)], while it increased for Vg≥Vonset (at off-state without accumulated hole channel). These variations are caused by two kinds of photocurrent mechanisms: One based on the photovoltaic effect for Vg < Vonset and another based on the photoconductive effect for Vg V onset. The maximum photosensitivity of OTFTs was found to be approximately 40 times higher in the on-state than in the off-state due to the contribution of photovoltaic effect in the on-state.

UR - http://www.scopus.com/inward/record.url?scp=77955791249&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955791249&partnerID=8YFLogxK

U2 - 10.1063/1.3456498

DO - 10.1063/1.3456498

M3 - Article

AN - SCOPUS:77955791249

VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

M1 - 023703

ER -